PTFA192001E Datasheet

PTFA192001E Thermally-Enhanced High Power RF LDMOS FET

The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS pro.

Features

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192001E Package H-36260-2 PTFA192001F Package H-37260-2 2-Carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -25 30 Features
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• 25 Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 1990 MHz, 30 V - Average output p.