PTFA192001F

PTFA192001E PTFA192001F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930 – 1990 MHz www.DataSheet4U.net Description The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs intended for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA192001E Package H-36260-2 PTFA192001F Package H-37260-2 2-Carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -25 30 Features 25 Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 1990 MHz, 30 V - Average output power = 47.0 dBm - Linear Gain = 15.9 dB - Efficiency = 27% - Intermodulation distortion = –36 dBc - Adjacent channel power = –41 dBc Typical single-carrier WCDMA performance at 1960 MHz, 30 V, 3GPP signal, P/AR = 7.5 dB - Average output power = 48.5 dBm - Linear Gain = 15.9 dB - Efficiency = 34% - Intermodulation distortion = –37 dBc - Adjacent channel power = –40 dBc Typical CW performance, 1960 MHz, 30 V - Output power at P–1dB = 240 W - Efficiency = 57% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of ...