BCP156
Elektronische Bauelemente
NPN Silicon Planar High Performance Transistor
RoHS Compliant Product
Description
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BCP156
Elektronische Bauelemente
NPN Silicon Planar High Performance
Transistor
RoHS Compliant Product
Description
www.DataSheet4U.net
SOT-89
The BCP156 is designed for general purpose switching and amplifier applications.
Features
* 3 Amp Continuous Current * 60 Volt VCEO * Low Saturation Voltage
REF.
A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20
REF.
G H I J K L M
Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF.
Absolute Maximum Ratings at TA=25 C
Symbol VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Junction and Storage Temperature
o
o
Parameter
Value 80 60 5 3 6 1.2 -55~+150
Units V V V A W
O
IC PD TJ,Tstg
C
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage
0.12 0.43 *VBE (sat) 0.9 Base-Emitter Saturation Voltage *VBE (on) 0.8 *hFE1 70 200 *hFE2 100 200 DC Current Gain *hFE3 80 170 80 40 *hFE4 Gain-Bandwidth Product 175 fT 140 Output Capacitance Cob Time-On 45 ton Time-Off toff 800 2% * Measured under pulse condition. Pulse width¡Ø300µs, Duty Cycle¡Ø
Spice parameter data is available upon request for this device.
http://www.SeCoSGmbH.com
Symbol BVCBO *BVC...