(PDF) BD13003B Datasheet PDF | SeCoS





BD13003B Datasheet PDF

Part Number BD13003B
Description NPN Plastic Encapsulated Transistor
Manufacture SeCoS
Total Page 2 Pages
PDF Download Download BD13003B Datasheet PDF

Features: Datasheet pdf BD13003B Elektronische Bauelemente 1.5A , 700V NPN Plastic Encapsulated Transis tor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power Switching Applications www.DataSheet4U.net TO-126 CLASSIFIC ATION OF ts Product-Rank Range Product- Rank Range BD3DD13003-A1 2-2.5 (µs) BD 3DD13003-B1 3-3.5 (µs) BD3DD13003-A2 A 2.5-3 (µs) F E B BD3DD13003-B2 3. 5-4 (µs) N L M K J H C D Collector G 2 REF. 1 Base 3 Emitter A B C D E F G Millimeter Min. Max. 7.40 7.80 2 .50 2.90 10.60 11.00 15.30 15.70 3.70 3 .90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.0 0 3.20 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Param eter Collector to Base Voltage Collecto r to Emitter Voltage Emitter to Base Vo ltage Collector Current - Continuous Co llector Power Dissipation Junction, Sto rage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Rating 700 400 9 1.5 1.5 150, -55~150 Unit V V V A W °.

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BD13003B datasheet
Elektronische Bauelemente
BD13003B
1.5A , 700V
NPN Plastic Encapsulated Transistor
FEATURES
Power Switching Applications
www.DataSheet4U.net
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-126
CLASSIFICATION OF ts
Product-Rank BD3DD13003-A1
Range
2-2.5 (µs)
Product-Rank BD3DD13003-B1
Range
3-3.5 (µs)
BD3DD13003-A2
2.5-3 (µs)
BD3DD13003-B2
3.5-4 (µs)
Collector
2
1
Base
3
Emitter
A
E
F
N
L
M
K
B
H
J
C
D
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
7.40 7.80
2.50 2.90
10.60 11.00
15.30 15.70
3.70 3.90
3.90 4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.10 1.50
0.45 0.60
0.66 0.86
2.10 2.30
1.17 1.37
3.00 3.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
700
400
9
1.5
1.5
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
700
-
-
V IC=5mA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
400
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
9
-
-
V IE=2mA, IC=0
Collector Cut – Off Current
ICBO - - 1 mA VCB=700V, IE=0
Collector Cut – Off Current
ICEO - - 0.5 mA VCE=400V, IB=0
Emitter Cut – Off Current
IEBO - - 1 mA VEB=9V, IC=0
DC Current Gain
hFE (1) 20 - 30
hFE (2)
5
-
-
VCE=5V, IC=0.5A
VCE=5V, IC=1.5A
Collector to Emitter Saturation Voltage
VCE(sat)
-
- 0.6 V IC=1A, IB=250mA
Base to Emitter Saturation Voltage
VBE(sat)
-
- 1.2 V IC=1A, IB=250mA
Transition Frequency
fT 5 - - MHz VCE=10V, IC=100mA, f =1MHz
Fall time
tf - - 0.5 µs IC=1A,IB1= -IB2=0.2A,VCC=100V
http://wwSw.tSoerCaoSgGemtbiHm.ceom/
tS 2 - 4 µAsny chaICng=e2s 5of0spmecAific(aUtioIn9w6il0l n0ot)be informed individually.
23-Jun-2011 Rev. A
Page 1 of 2

BD13003B datasheet
Elektronische Bauelemente
CHARACTERISTIC CURVE
BD13003B
1.5A , 700V
NPN Plastic Encapsulated Transistor
http://www.SeCoSGmbH.com/
23-Jun-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2





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