2SA2113
Transistor
Medium power transistor (−30V, −2A)
2SA2113
!Features 1) High speed switching. (Tf : Typ. : 20ns at ...
2SA2113
Transistor
Medium power
transistor (−30V, −2A)
2SA2113
!Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −2A) 2) Low saturation voltage, typically (Typ. : −200mV at IC = −1A, IB = −0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5916 !External dimensions (Units : mm)
TSMT3
0.95 0.95
(1)
2.8 1.6
1.9
0.4
(3)
(2)
2.9 1.0MAX 0.85
0.16
(1)Base (2)Emitter (3)Collector
0.1
0.3
0.6
Each lead has same dimensions
Abbreviated symbol : UX
!Applications Low frequency amplifier High speed switching
!Structure
PNP Silicon epitaxial planar
transistor
!Packaging specifications
Package Type 2SA2113 Code Basic ordering unit (pieces) Taping TL 3000
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol VCBO VCEO VEBO IC Collector current ICP PC Power dissipation Tj Junction temperature Range of storage temperature Tstg
∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land
Limits −30 −30 −6 −2 −4 500 150 −55~+150
Unit V V V A A ∗1 mW ∗2 °C °C
0
0.7
1/3
2SA2113
Transistor
!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. BVCBO −30 − Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO −30 − Emitter-base breakdown voltage BVEBO −6 − ICBO − − Collector cut-off current IEBO − − Emitter cut-off current − −200 Collector-emitter saturation voltage VCE (sat) hFE 120 − DC current gain fT − 350 Transition freque...
