N-Channel MOSFET
APT100M50J
500V, 103A, 0.036Ω Max
N-Channel MOSFET
G S
D
SOT-227 S
Power MOS 8™ is a high speed, high voltage N-chan...
Description
APT100M50J
500V, 103A, 0.036Ω Max
N-Channel MOSFET
G S
D
SOT-227 S
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
"UL Recognized"
IS OTO P ®
file # E145592
APT100M50J
D
Single die MOSFET G
S
FEATURES
Fast switching with low EMI/RFI Low RDS(on) Ultra low Crss for improved noise immunity Low gate charge Avalanche energy rated RoHS compliant
TYPICAL APPLICATIONS
PFC and other boost converter Buck converter Two switch forward (asymmetrical bridge) Single switch forward Flyback Inverters
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C
IDM
Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD RθJC
Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance
RθCS TJ,TSTG V...
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