Document
APT14M100B APT14M100S
1000V, 14A, 0.88Ω Max
N-Channel MOSFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaciwww.DataSheet4U.net tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.
TO -2 47
D3PAK
APT14M100B
APT14M100S
D
Single die MOSFET
G S
FEATURES
• Fast switching with low EMI/RFI • Low RDS(on) • Ultra low Crss for improved noise immunity • Low gate charge • Avalanche energy rated • RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter • Buck converter • Two switch forward (asymmetrical bridge) • Single switch forward • Flyback • Inverters
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 14 9 55 ±30 875 7
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RθJC RθCS TJ,TSTG TL WT Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) 0.22 Package Weight 5.9 10 Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw 1.1 MicrosemiWebsite-http://www.microsemi.com N·m -55 0.11 150 °C 300 oz g in·lbf
04-2009 050-8105 Rev B
Min
Typ
Max 500 0.25
Unit W °C/W
Static Characteristics
Symbol
VBR(DSS) ΔVBR(DSS)/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ IDSS IGSS
TJ = 25°C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 7A VGS = VDS, ID = 1mA VDS = 1000V VGS = 0V TJ = 25°C TJ = 125°C
APT14M100B_S
Typ 1.15 0.71 4 -10 Max Unit V V/°C Ω V mV/°C µA nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 1000
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
3
0.88 5 100 500 ±100
VGS = ±30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25°C unless otherwise specified
Test Conditions VDS = 50V, ID = 7A
VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 16 3965 55 335 135
Max
Unit S
pF
VGS = 0V, VDS = 0V to 667V
5
Effective Output Capacitance,.