APTM120U10DAG

APTM120U10DAG Single switch with Series diodes MOSFET Power Module www.DataSheet4U.net VDSS = 1200V RDSon = 100mΩ typ @ Tj = 25°C ID = 116A @ Tc = 25°C Application Zero Current Switching resonant mode Features Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration AlN substrate for improved thermal performance S D SK G Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Max ratings 1200 116 86 464 ±30 120 3290 24 50 3200 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120U100DAG Rev 2 June, 2008 Tc = 25°C APTM120U10DAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(...