ARF301
125V, 300W, 45MHz
P-CHANNEL ENHANCEMENT MODE
www.DataSheet4U.net
RF POWER MOSFET
The ARF301 is a P-CHANNEL RF ...
ARF301
125V, 300W, 45MHz
P-CHANNEL ENHANCEMENT MODE
www.DataSheet4U.net
RF POWER MOSFET
The ARF301 is a P-CHANNEL RF power
transistor in a high efficiency flangeless package. It is designed for high voltage operation in narrow band ISM and MRI power amplifiers at frequencies up to 45MHz. The
transistor is well matched to the ARF300 N-CHANNEL RF power
transistor making the pair well suited for bridge configurations
Specified 125 Volt, 27 MHz Characteristics: Output Power = 300 Watts. Gain = 15dB (Class E) Efficiency = 80% RoHS Compliant
High Performance High Voltage Breakdown and Large SOA for Superior Ruggedness Low Thermal Resistance. Capacitance matched with ARF300 N-Channel
Maximum Ratings
Symbol VDSS VDGO ID VGS PD TJ, TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063” from Case for 10 Sec.
All Ratings: TC =25°C unless otherwise specified
Ratings 500 500 20 ±30 833 -55 to 175 300 Unit V A V W °C
Static Electrical Characteristics
Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Voltage 1 (ID(ON) = 10A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VDS = ±30V, VDS = 0V) Forward Transconductance (VDS = 1...