2SA562TM Type Transistor Datasheet

2SA562TM Datasheet, PDF, Equivalent


Part Number

2SA562TM

Description

Silicon PNP Epitaxial Type Transistor

Manufacture

Toshiba Semiconductor

Total Page 3 Pages
Datasheet
Download 2SA562TM Datasheet


2SA562TM
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA562TM
2SA562TM
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Unit: mm
· Excellent hFE linearity: hFE (2) = 25 (min)
at VCE = 6 V, IC = 400 mA
· 1 watt amplifier application.
· Complementary to 2SC1959.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
-35
-30
-5
-500
-100
500
150
-55~150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = -35 V, IE = 0
IEBO
VEB = -5 V, IC = 0
hFE (1)
VCE = -1 V, IC = -100 mA
(Note)
hFE (2)
VCE = -6 V, IC = -400 mA
(Note)
VCE (sat)
VBE
fT
Cob
IC = -100 mA, IB = -10 mA
VCE = -1 V, IC = -100 mA
VCE = -6 V, IC = -20 mA
VCB = -6 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 70~140, Y: 120~240
hFE (2) classification O: 25 (min), Y: 40 (min)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Min Typ. Max Unit
¾ ¾ -0.1 mA
¾ ¾ -0.1 mA
70 ¾ 240
25 ¾ ¾
¾ -0.1 -0.25 V
¾ -0.8 -1.0
V
¾ 200 ¾ MHz
¾ 13 ¾ pF
1 2003-03-27

2SA562TM
2SA562TM
2 2003-03-27


Features TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA562TM 2SA562TM Audio Frequency Low Power Amplifier Ap plications Driver Stage Amplifier Appli cations Switching Applications Unit: m m · Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA · 1 watt amplifier application. · Complementary to 2SC1959. Maximum Rat ings (Ta = 25°C) Characteristics Coll ector-base voltage Collector-emitter vo ltage Emitter-base voltage Collector cu rrent Base current Collector power diss ipation Junction temperature Storage te mperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -35 -30 -5 -50 0 -100 500 150 -55~150 Unit V V V mA m A mW °C °C Electrical Characteristic s (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off cur rent Emitter cut-off current DC current gain Collector-emitter saturation volt age Base-emitter voltage Transition fre quency Collector output capacitance IC BO VCB = -35 V, IE = 0 IEBO VEB = -5 V, IC = 0 hFE (1) VCE = -1 V, IC .
Keywords 2SA562TM, datasheet, pdf, Toshiba Semiconductor, Silicon, PNP, Epitaxial, Type, Transistor, SA562TM, A562TM, 562TM, 2SA562T, 2SA562, 2SA56, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)