TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA562TM
2SA562TM
Audio Frequency Low Power Amplifier Appl...
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT process)
2SA562TM
2SA562TM
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
Unit: mm
· Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA
· 1 watt amplifier application. · Complementary to 2SC1959.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
-35 -30 -5 -500 -100 500 150 -55~150
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = -35 V, IE = 0
IEBO
VEB = -5 V, IC = 0
hFE (1) VCE = -1 V, IC = -100 mA
(Note)
hFE (2) VCE = -6 V, IC = -400 mA
(Note)
VCE (sat) VBE fT Cob
IC = -100 mA, IB = -10 mA VCE = -1 V, IC = -100 mA VCE = -6 V, IC = -20 mA VCB = -6 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 70~140, Y: 120~240 hFE (2) classification O: 25 (min), Y: 40 (min)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
Min Typ. Max Unit ¾ ¾ -0.1 mA ¾ ¾ -0.1 mA
70 ¾ 240
25 ¾ ¾
¾ -0.1 -0.25 V
¾ -0.8 -1.0
V
¾ 200 ¾ MHz
¾ 13 ¾ pF
1 2003-03-27
2SA562TM
2 2003...