Current Transistor. PZT158 Datasheet

PZT158 Transistor. Datasheet pdf. Equivalent

Part PZT158
Description Silicon Planar High Current Transistor
Feature PZT158 Elektronische Bauelemente NPN Transistor Silicon Planar High Current Transistor RoHS Complia.
Manufacture SeCoS
Total Page 2 Pages
Datasheet
Download PZT158 Datasheet



PZT158
Elektronische Bauelemente
Description
The PZT158 is designed for general
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applications.
PZT158
NPN Transistor
Silicon Planar High Current Transistor
RoHS Compliant Product
SOT-223
Features
* 6Amps Continous Current, Up To
20Amps Peak Current
* Excellent Gain Characteristic,
Specified Up To 10Amps
* Very Low Saturation Voltages
158
MAXIMUM RATINGS* (Tamb =25oC, unless otherwise specified)
REF.
A
C
D
E
I
H
Min.
6.70
2.90
0.02
0
0.60
0.25
Max.
7.30
3.10
0.10
10
0.80
0.35
REF.
B
J
1
2
3
4
5
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
150 V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
60 V
6V
IC
Collector Current (DC)
Collector Current (Pulse)
6A
20
PD Total Power Dissipation
3W
TJ,Tstg
Junction and Storage Temperature
-55~-150
CO
*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..
ELECTRICAL CHARACTERISTICS Tamb=25oC unless otherwise specified
Parameter
Symbol Min Typ. Max
Collector-Base Breakdown Voltage
BVCBO 150
-
-
Collector-Emitter Breakdown Voltage *BVCEO
60
-
-
Emitter-Base Breakdown Voltage
BVEBO
6
--
Collector-Base Cutoff Current
ICBO - - 50
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
-
-
-
-
-
-
-
- 50
- 10
- 50
- 100
- 170
- 375
- 1.2
Base-Emitter Voltage
*VBE(on)
*hFE1
-
100
-
-
1.15
-
DC Current Gain
*hFE2
*hFE3
100 200 300
75 -
-
Gain-Bandwidth Product
*hFE4
fT
25 -
- 130
-
-
Output Capacitance
Cob - 45 -
On-Time
Ton - 45 -
Off-Time
Toff
- 1100
-
*Measured under pulse condition. Pulse widthЉ300ȝs, Duty CycleЉ2%
Spice parameter data is available upon request for this device.
http://www.SeCoSGmbH.com
Uni
V
V
V
nA
nA
nA
mV
V
V
MHz
pF
Test Conditions
IC= 100µA, IE=0
IC= 10mA, IB=0
IE= 100µA, IC=0
VCB= 120V, IE=0
VCES=60V
VEB= 6V, IC=0
IC= 100mA, IB= 5mA
IC= 1A, IB= 50mA
IC= 2A, IB= 50mA
IC= 6A, IB= 300mA
IC= 6A, IB= 300mA
VCE= 1V, IC= 6A
VCE= 1V, IC= 10mA
VCE= 1V, IC= 2A
VCE= 1V, IC= 5A
VCE= 1V, IC= 10A
VCE= 10V, IC= 100mA, f=50MHz
VCB= 10V, IE=0, f=1MHz
nS VCC=10V,IC=1A,IB1=IB2=100mA
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2



PZT158
Elektronische Bauelemente
CHARACTERISTIC CURVES
PZT158
NPN Transistor
Silicon Planar High Current Transistor
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2





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