Current Transistor. PZT159 Datasheet

PZT159 Transistor. Datasheet pdf. Equivalent

Part PZT159
Description PNP Silicon Planar High Current Transistor
Feature PZT159 PNP Silicon Planar High Current Transistor P b Lead(Pb)-Free www.DataSheet4U.net COLLECTOR 2.
Manufacture Weitron Technology
Datasheet
Download PZT159 Datasheet



PZT159
PZT159
PNP Silicon Planar High Current Transistor
P b Lead(Pb)-Free
www.DataSheet4U.net
BASE
1
COLLECTOR
2, 4
3
EM ITTER
SOT-223
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
4
ABSOLUTE MAXIMUM RATINGS (TA=25 C)
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Collector to Base Voltage
Collector Current
Collector Current
Total Device Disspation TA=25°C
Junction Temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
PD
Tj
Value
-100
-60
-6
-5
-15
3
+150
Storage, Temperature
Tstg -55 to +150
*Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min).
Unit
V
V
V
A
A
W
˚C
˚C
Device Marking
PZT159 =159
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Base Breakdown Voltage
IC=-100µA, IE=0
Collector-Emitter Breakdown Voltage(1)
IC=-10mA, IB=0
Emitter-Base Breakdown Voltage
IE=-100µA, IC=0
Collector Cut-O Current
VCB=-80V, IE=0
Collector Cut-O Current
VCES=-60V
Emitter-Cut-O Current
VEB=-6V, IC=0
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
Min
-100
-60
-6
-
-
-
Max
-
-
-
-
-
-
Max
-
-
-
-50
-50
-10
Unit
V
V
V
nA
nA
nA
WEITRON
http://www.weitron.com.tw
1/4
11-Jul-07



PZT159
PZT159
ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted)
Characteristic
Symbol Min
Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain
VCE=-1V, IC=-10mA
VCE=-1V, IC=-2A
VCE=-1V, IC=-5A
VCE=-1V, IC=-10A
Collector-Emitter Saturation Voltage
IC=-100mA, IB=-10mA
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-5A, IB=-500mA
Base-Emitter Saturation Voltage
IC=-5A, IB=-500mA
Base-Emitter On Voltage
VCE=-1V, IC=-5A
hFE1
hFE2
hFE3
hFE4
VCE(sat)
VBE(sat)
VBE(on)
100
100
75
10
-
-
-
-
-
-
200 -
200 300
90 -
25 -
-20 -50
-85 -140
-155 -210
-370 -460
-1.08 -1.24
-0.935 -1.07
-
mV
V
V
DYNAMIC CHARACTERISTICS
Transition Frequency
VCE=-10V, IC=-100mA, f=50MHz
Output Capacitance
VCB=-10V, IE=0, f=1MHz
fT - 120 - MHz
Cob - 74 - pF
SWITCHING TIMES
Switching Times
VCC=-10V,IC=-2A, IB1=IB2=-200mA
ton
-
82
-
ns
to - 350 -
Note 1.Pulse Test : Pulse width < 300µs, Duty cycle ≤ 20%.
WEITRON
http://www.weitron.com.tw
2/4
11-Jul-07





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