Current Transistor. PZT159 Datasheet

PZT159 Transistor. Datasheet pdf. Equivalent

Part PZT159
Description High Current Transistor
Feature PZT159 Elektronische Bauelemente RoHS Compliant Product PNP Silicon Planar High Current Transistor .
Manufacture SeCoS
Total Page 2 Pages
Datasheet
Download PZT159 Datasheet



PZT159
Elektronische Bauelemente
PZT159
PNP Silicon Planar
High Current Transistor
RoHS Compliant Product
Features
* 5 Amps continuous current, up to 15 Amp peak current.
ww*w.EDxactaeSlhleeent4tUg.naeint characteristic specified up to 10Amps.
* Very low saturation voltage
SOT-223
f 
0.30±0.03
R0.15
R0.15
Mechanical Data
Case: SOT-223 Plastic Package
Weight: approx. 0.021g
Marking Code: 159
C
E
C
B
Maximum Ratings and Thermal Characteristics
(TA = 25OC unless otherwise noted)
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
Total Power Dissipation
IC
PD
Notes: Device on alumina substrate.
-


f 
123
1. BASE
2. COLLECTOR
3. EMITTER
Value
+150
-55 to +150
-100
-60
-6
-5
-15
3.0
0.25
12°±1°
6°±3°
12°±1°
Unit
OC
OC
V
V
V
A
A
W
Electrical Characteristic s (TJ = 25OC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
(w/ Real Device Limit)
Symbol
BVCBO
BVCER
Min
-100
-100
Typ.
-
-
Max
-
-
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
(w/ Real Device Limit)
*BVCEO
BVEBO
ICBO
ICER
-60
-6
-
-
--
--
- -50
- -50
Emitter-Base Cutoff Current
Collector Saturation Voltage 1
Collector Saturation Voltage 2
Collector Saturation Voltage 3
Collector Saturation Voltage 4
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain 1
DC Current Gain 2
DC Current Gain 3
DC Current Gain 4
Gain-Bandwidth Product
Output Capacitance
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
IEBO - - -10
*VCE(sat)1 -
-20 -50
*VCE(sat)2 -
-85 -140
*VCE(sat)3 -
-155 -210
*VCE(sat)4 -
-370 -460
*VBE(sat) - -1.08 -1.24
*VBE(on)
- -0.935 -1.07
*hFE1
100 200
-
*hFE2
100 200 300
*hFE3
75 90
-
*hFE4
10 25
-
fT - 120 -
Cob - 74 -
Uni Test Conditions
V IC=-100µA, IE=0
V IC=-1µA, RB=1K
V IC=-100mA, IB=0
V IE=-100µA, IC=0
nA VCB=-80V, IE=0
nA VCB=-80V, R=1K
nA VEB=-6V, IC=0
mV IC=-100mA, IB=-10mA
mV IC=-1A, IB=-100mA
mV IC=-2A, IB=-200mA
mV IC=-5A, IB=-500mA
V IC=-5A, IB=-500mA
V VCE=-1V, IC=-5A
VCE=-1V, IC=-10mA
VCE=-1V, IC=-2A
VCE=-1V, IC=-5A
VCE=-1V, IC=-10A
MH VCE=-10V, IC=-100mA,
pF VCB=-10V, IE=0, f=1MHz
Any changing of specification will not be informed individual
Page 1 of 2



PZT159
Elektronische Bauelemente
PZT159
PNP Silicon Planar
High Current Transistor
On-Time
ton - 82 -
Off-Time
toff - 350 -
*Measured under pulse condition. Pulse widthЉ300ȝs, Duty CycleЉ2%
Spice parameter data is available upon request for this device.
ns
VCC=-10V, IC=2A,
IB1=IB2=-200mA
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2





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