Power Transistor. PZT194 Datasheet

PZT194 Transistor. Datasheet pdf. Equivalent

Part PZT194
Description Silicon Planar Medium Power Transistor
Feature PZT194 Elektronische Bauelemente NPN Transistor Silicon Planar Medium Power Transistor RoHS Complia.
Manufacture SeCoS
Datasheet
Download PZT194 Datasheet



PZT194
Elektronische Bauelemente
Description
The PZT194 is designed for medium
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PZT194
NPN Transistor
Silicon Planar Medium Power Transistor
RoHS Compliant Product
SOT-223
Features
* 1 Amps Continous Current
* 60 Volt VCEO
* Complementary To PZT195
194
MAXIMUM RATINGS* (Tamb =25oC, unless otherwise specified)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
Collector Current (Pulse)
IB Base Current
PD Total Power Dissipation
TJ,Tstg
Junction and Storage Temperature
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0 10
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Value
80
60
5
1
2
200
2
-55~+150
Units
V
V
V
A
mA
W
CO
ELECTRICAL CHARACTERISTICS Tamb=25oC
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Cutoff Current
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
ICES
Min
80
60
5
-
-
-
Collector Saturation Voltage
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
-
-
-
-
100
100
80
30
150
-
unless otherwise specified
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
100
100
100
0.25
0.5
1.1
1.0
-
300
-
-
-
10
Unit
V
V
V
nA
nA
nA
V
V
V
MHz
pF
Test Conditions
IC= 100µA, IE=0
IC= 10mA, IB=0
IE= 100µA, IC=0
VCB= 60V, IE=0
VEB=4V,I C=0
VCES = 60V
IC=500mA,IB=50 mA
I C= 1A,IB=100mA
I C= 1A,IB=100mA
I C= 1A,VCE=5V
VCE= 5 V, IC=1mA
VCE= 5 V, IC=500mA
VCE= 5 V, IC=1A
VCE= 5 V, IC=2A
VCE= 10V, IC= 50 mA, f=100MHz
VCB= 10V, f=1MHz,IE=0
*Measured under pulse condition. Pulse width 300µs, Duty Cycle 2%
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2



PZT194
Elektronische Bauelemente
Characteristics Curve
PZT194
NPN Transistor
Silicon Planar Medium Power Transistor
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2





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