Power Transistor. PZT195 Datasheet

PZT195 Transistor. Datasheet pdf. Equivalent

Part PZT195
Description Medium Power Transistor
Feature PZT195 Elektronische Bauelemente PNP Silicon Planar Medium Power Transistor RoHS Compliant Product .
Manufacture SeCoS
Datasheet
Download PZT195 Datasheet



PZT195
Elektronische Bauelemente
Features
* -60 Voltage VCEO.
ww*w.1DaAtamShpeset4cUo.nnteitnuous current.
* Complementary to PZT194
PZT195
PNP Silicon Planar
Medium Power Transistor
RoHS Compliant Product
SOT-223
f 
f
5
5
Mechanical Data
Case: SOT-223 Plastic Package
Weight: approx. 0.021g
Marking Code: 195
C
E
C
B
Maximum Ratings and Thermal Characteristics
(TA = 25OC unless otherwise noted)
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse)
IC
Total Power Dissipation
PD
Notes: Device on alumina substrate.
Electrical Characteristics (TJ = 25OC unless otherwise noted)
-


f 
123
1. BASE
2. COLLECTOR
3. EMITTER
Value
+150
-55 to +150
-80
-60
-5
-1
-0.2
2.0

efe
efe
efe
f
Unit
OC
OC
V
V
V
A
A
W
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emmiter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage 1
Collector Saturation Voltage 2
Base Saturation Voltage
Base-Emitter Voltage
DC Current Gain 1
DC Current Gain 2
DC Current Gain 3
DC Current Gain 4
Gain-Bandwidth Product
Output Capacitance
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
Min Typ. Max Unit
Test Conditions
-80 - - V IC=-100uA, IE=0
-60 - - V IC=-10mA, IB=0
-5 - - V IE=-100uA, IC=0
- - -100 nA VCB=-60V, IE=0
- - -100 nA VCES=-60V
- - -100 nA VEB=-4V, IC=0
- - -0.3 V IC=-500mA, IB=-50mA
- - -0.6 V IC=-1A, IB=-100mA
- - -1.2 V IC=-1A, IB=-100mA
- - -1.0 V VCE=-5V, IC=-1A
100 - - - VCE=-5V, IC=1mA
100 - 300 - VCE=-5V, IC=-500mA
80 - - - VCE=-5V, IC=-1A
15 - - - VCE=-5V, IC=-2A
150 -
- MHz VCE=-10V, IC=-50mA, f=100MHz
- - 10 pF VCB=-10V, IE=0, f=1MHz
Any changing of specification will not be informed individual
Page 1 of 2



PZT195
Elektronische Bauelemente
Characteristics Curve
PZT195
PNP Silicon Planar
Medium Power Transistor
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2





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