Driver Hybrid. DRF1201 Datasheet

DRF1201 Hybrid. Datasheet pdf. Equivalent

Part DRF1201
Description MOSFET Driver Hybrid
Feature DRF1201 1000V, 26A, 30MHz MOSFET Driver Hybrid The DRF1201 hybrid includes a high power gate driver.
Manufacture Microsemi Corporation
Total Page 4 Pages
Datasheet
Download DRF1201 Datasheet



DRF1201
MOSFET Driver Hybrid
The DRF1201 hybrid includes a high power gate driver and the power
www.DMaOtaSShFeeEt4TU. .nTeht e driver output can be congured as Inverting and Non-
Inverting. It was designed to provide the system designer increased
exibility and lowered cost over a non-integrated solution.
DRF1201
1000V, 26A, 30MHz
FEATURES
• Switching Frequency: DC TO 30MHz
• Low Pulse Width Distortion
• Single Power Supply
• 1V CMOS Schmitt Trigger Input 1V
Hysteresis
• Inverting Non-Inverting Select
• RoHS Compliant
• Switching Speed 3-4ns
• BVds = 1Kv
• Ids = 26A avg.
• Rds(on) .55 Ohm
• PD = 1100W
Driver Absolute Maximum Ratings
Symbol
VDD
IN, FN
IO PK
TJMAX
Parameter
Supply Voltage
Input Single Voltages
Output Current Peak
Operating Temperature
Driver Specications
Symbol
VDD
IN
Parameter
Supply Voltage
Input Voltage
IN(R)
IN(F)
IDDQ
IO
Ciss
RIN
VT(ON)
VT(OFF)
TDLY
tr
tf
TD
Input Voltage Rising Edge
Input Voltage Falling Edge
Quiescent Current
Output Current
Input Capacitance
Input Parallel Resistance
Input, Low to High Out (See Truth Table)
Input, High to Low Out (See Truth Table)
Time Delay (throughput)
Rise Time
Fall Time
Prop. Delay
TYPICAL APPLICATIONS
• Class C, D and E RF Generators
• Switch Mode Power Ampliers
• Pulse Generators
• Ultrasound Transducer Drivers
• Acoustic Optical Modulators
Min Typ Max Unit
15
-.7 to +5.5
V
8A
175 °C
Min Typ Max Unit
10 15
V
3 5.5
3
ns
3
2 mA
8A
3
1 MΩ
0.8 1.1
V
1.9 2.2
38 ns
5
5 ns
35
Microsemi Website - http://www.microsemi.com



DRF1201
Driver Output Characteristics
Symbol
Parameter
Cout Output Capacitance
Rout Output Resistance
Lout Output Inductance
FMAX Operating Frequency CL = 3000nF + 50Ω
FMAX Operating Frequency RL = 50Ω
Driver Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance Junction to Case
RθJHS
Thermal Resistance Junction to Heat Sink
TJSTG
Storage Temperature
PDJHS
PDJC
Maximum Power Dissipation @ TSINK = 25°C
Total Power Dissipation @ TC = 25°C
MOSFET Absolute Maximum Ratings
Symbol
Parameter
BVDSS
ID
RDS(on)
Drain Source Voltage
Continuous Drain Current THS = 25°C
Drain-Source On State Resistance
Tjmax
Operating Temperature
MOSFET Dynamic Characteristics
Symbol
Parameter
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
MOSFET Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance Junction to Case
RθJHS
Thermal Resistance Junction to Heat Sink
TJSTG
Storage Temperature
PDHS
Maximum Power Dissipation @ TSINK = 25°C
PDC Total Power Dissipation @ TC = 25°C
Microsemi reserves the right to change, without notice, the specications and information contained herein.
DRF1201
Min Typ Max Unit
2500
pF
.8 Ω
3 nH
30
MHz
50
Min Typ Max
1.5
2.5
-55 to 150
60
100
Unit
°C/W
°C
W
Min Typ Max Unit
1000
V
26 A
0.55 Ω
175 °C
Min Typ Max Unit
2000
165 pF
75
Min Typ Max
0.53
0.141
-55 to 150
1060
2830
Unit
°C/W
°C
W
Figure 1, DRF1201 Simplied Circuit Diagram
The Simplied DRF1201 Circuit Diagram is illustrated above. By including the driver high speed by-pass capacitor (C1), the contribution to
the internal parasitic loop inductance of the driver output is greatly reduced. This, coupled with the tight geometry of the hybrid, allows optimal
gate drive to the MOSFET. This low parasitic approach, coupled with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the Anti-
Ring Function, provide improved stability and control in Kilowatt to Multi-Kilowatt, high Frequency applications. Both the FN and IN pins are
referenced to the Kelvin ground (SG.) The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary
circuitry designed specically for the ring abatement. The power drivers provide high current to the gate of the MOSFETS.





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