Switching Diode. MMBD318C Datasheet

MMBD318C Diode. Datasheet pdf. Equivalent

Part MMBD318C
Description Surface Mount High Votlage Switching Diode
Feature MMBD318 Series MMBD318/MMBD318A/MMBD318C/MMBD318S Elektronische Bauelemente FEATURES RoHS Compliant.
Manufacture SeCoS
Datasheet
Download MMBD318C Datasheet



MMBD318C
MMBD318 Series
Elektronische Bauelemente
MMBD318/MMBD318A/MMBD318C/MMBD318S
Surface Mount High Votlage Switching Diode
FEATURES
RoHS Compliant Product
High Reverse Breakdown Voltage
www.DataShUeeltt4rUa.nheitgh speed Switching
High Conductance
A suffix of "-C" specifies halogen & lead-free
A
L
Top View
BS
MECHANICAL DATA
Case: SC59, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Mounting Position: Any
V
D
33
G
C
H
K
3
1
2
3
SC-59
Dim Min Max
A 2.700 3.100
B 1.400 1.600
C 1.000 1.400
D 0.350 0.500
G 1.800 2.000
H 0.000 0.100
J 0.085 0.177
K 0.400 0.600
J L 0.850 1.150
S 2.400 2.800
V 0.450 0.550
All Dimension in mm
3
12
MMBD318 Marking: LD6
12
MMB D318A Marking: LD7
12
MMB D318C Marking: LD8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Max.Repetitive Peak Reverse Voltage
Max.RMS Voltage
Max. DC Blocking Voltage
Max. Average Forward Rectified Current
Typical Junction Capacitance between Terminal (Note 1)
Max. Reverse Recovery Time (Note2)
Non-Repetive Peak Forward surge Current @Tp=1.0us
@Tp= 1.0s
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operation and Storage Temperature Range
Symbol
V RRM
V RMS
VDC
Io
Cj
Trr
IFSM
PD
R JA
Tj ,TSTG
12
MMB D318S Marking: LD9
Ratings
350
212
300
225
5.0
50
4
1
350
357
-60~+150
Unit
V
V
V
mA
pF
ns
A
mW
°C/W
°C
Electrical Characteristics (AT TA = 25°C unless otherwise noted)
Characteristics
Reverse Breakdown Voltage. IR=150uA
Symbol
VR
Average Reverse Current.
Forward Voltage
VR=240V, TA=25°C
VR=240V, TA=150°C
IR
VF
Note: 1. Measured at 1.0 MHz and applied reverse of 0 voltage
2. Measured at applied forware current of 30mA, RL=100 and recovery to IRR=-3mA
3. ESD sensitive product handling required.
Min.
350
-
-
-
Max.
-
100
100
1.0
Unit
V
nA
uA
V
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2



MMBD318C
Elektronische Bauelemente
MMBD318 Series
MMBD318/MMBD318A/MMBD318C/MMBD318S
Surface Mount High Votlage Switching Diode
500
400
300
200
100
0
0
1000
100 200
TA, AMBIENT TEMPERATURE, (°C)
Fig. 1 Power Derating Curve, total package
100
Tj = 150°C
10
Tj = 75°C
1.0
0.1
0.01
Tj = 25°C
0.001
0
50 100 150 200 250 300 350
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics, per element
1000
100
10
1.0
Tj = 150°C
Tj = 25°C
0.1
0.01
0
400 800 1200 1600 2000
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 2 Typical Forward Characteristics, per element
1.1
1.0
0.9
0.8
0.7
0.01
0.1 1.0 10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Total Capacitance
vs. Reverse Volta ge, per element
100
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)