Switching Diode. MMBD4448F Datasheet

MMBD4448F Diode. Datasheet pdf. Equivalent

Part MMBD4448F
Description Plastic-Encapsulated Switching Diode
Feature MMBD4448F Elektronische Bauelemente Plastic-Encapsulated Switching Diode RoHS Compliant Product A s.
Manufacture SeCoS
Total Page 2 Pages
Datasheet
Download MMBD4448F Datasheet



MMBD4448F
Elektronische Bauelemente
MMBD4448F
Plastic-Encapsulated Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
DESCRIPTION
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Fast switching speed
For general purpose switching applications
High conductance
Surface mount package ideally suited for automatic insertion
A
L
3
Top View
CB
12
KE
1
MARKING: KA3
D
F GH
3
2
J
3
12
REF.
A
B
C
D
Millimeter
Min. Max.
1.05 REF.
0.20 REF.
0.80 1.00
0.25 0.40
REF.
E
F
G
H
Millimeter
Min. Max.
0.080 0.180
1.15 1.45
1.60 1.80
2.30 2.70
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Peak Forward Surge Current
@ t = 1.0µs
@ t = 1.0s
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature
PD
RθJA
TSTG
VALUE
100
75
75
75
53
500
250
4.0
1.5
200
625
-65~150
UNIT
V
V
V
V
V
mA
mA
A
mW
°C/ W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN.
MAX.
Forward Voltage
Reverse Current
Capacitance Between Terminals
VF1 0.62
VF2 -
VF3 -
VF4 -
IR1 -
IR2 -
CT -
0.720
0.855
1.00
1.25
2.5
25
4
Reverse Recovery Time
tRR -
4
UNIT
V
V
V
V
µA
nA
pF
nS
TEST CONDITION
IF = 5mA
IF = 10mA
IF = 100mA
IF = 150mA
VR = 75V
VR = 20V
VR = 0V, f = 1MHz
IF = IR = 10mA, Irr = 0.1 x IR
RL =100
25-Dec-2009 Rev. A
Page 1 of 2



MMBD4448F
Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES
MMBD4448F
Plastic-Encapsulated Switching Diode
25-Dec-2009 Rev. A
Page 2 of 2





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