Epitaxial Planar. TPS820B Datasheet

TPS820B Planar. Datasheet pdf. Equivalent

Part TPS820B
Description Silicon Epitaxial Planar
Feature TPS820(B,F) TOSHIBA Photo-IC Silicon Epitaxial Planar TPS820(B,F) Lead(Pb)-Free Photo-Electric Swit.
Manufacture Toshiba Semiconductor
Total Page 5 Pages
Datasheet
Download TPS820B Datasheet



TPS820B
TOSHIBA Photo-IC Silicon Epitaxial Planar
TPS820(B,F)
Lead(Pb)-Free
Photo-Electric Switches
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Luminosity Adjustment for Various
Types of Equipment
TPS820(B,F)
Unit: mm
The TPS820(B,F) is a linear output photo-IC
(current output type) which incorporates a
photodiode and a current amp circuit in a single
chip.
The sensitivity is superior to that of a
phototransistor and its illuminance output linearity
is excellent.
High sensitivity: IL = 1.5 mA (Min) @E = 0.1
mW/cm2
Little fluctuation in light current
Output linearity of illuminance is excellent.
Low current consumption: ICC = 1 μA (max) at
VCC = 5 V
Housed in compact side-view epoxy resin
package
TOSHIBA
Weight: 0.12 g (typ.)
Black package impermeable to visible light
The TPS820 is suitable for use in combination
with the TLN117(F) infrared LED lamp whose package size is the same.
0-3H1
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
Output voltage
Light current
Power dissipation
Power dissipation derating
Operating temperature range
Storage temperature range
Soldering temperature (5 s) (Note1)
VCC
VO
IL
P
ΔP/°C
Topr
Tstg
Tsol
0.5~7
<= VCC
10
250
3.33
25~85
40~100
260
V
V
mA
mW
mW/°C
°C
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: At the location of 1.3 mm from the resin package bottom
1 2007-10-01



TPS820B
Pin Configuration
TPS820(B,F)
Current
AMP.
3. VCC
2. OUT
1. GND
Optical and Electrical Characteristics (Ta = 25°C, VCC = 5 V)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Current consumption
Light current (1)
Light current (2)
Output linearity
Saturation output voltage
Dark current
Peak sensitivity wavelength
Rise time
Fall time
ICC
IL(1)
IL(2)
IL(2)/IL(1)
VOUT(sat)
ID
λp
tr
tf
E = 0, IL must be open between
pins
E = 0.01 mW/cm2
(Note2)
E = 0.1 mW/cm2
(Note2)
E = 0.1 mW/cm2
RL = 10 kΩ
E=0
(Note2)
VOUT = 2.5 V
RL = 10 kΩ
(Note3)
150
1.5
8
4.1
0.017
10
4.2
870
250
700
1
600
6
12
0.5
μA
μA
mA
V
μA
nm
μs
μs
Note 2: The light used is a CIE standard A light source (a standard tungsten bulb with a color temperature of 2856K)
Note 3: Switching time measurement circuit and waveform
Pulse drive
VCC
TPS820
0.01 μF
VOUT
RL
IF
VOUT
tr
90%
10%
tf
Precautions
When this device is used in combination with an LED lamp, the lamp must be an infrared LED lamp.
To stabilize the power line, insert a bypass capacitor of up to 0.01 μF between VCC and GND, close to the device.
When the power is turned on, the output value will fluctuate for 1 ms as the internal circuit stabilizes.
2 2007-10-01





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