2SD1841. D1841 Datasheet

D1841 2SD1841. Datasheet pdf. Equivalent

Part D1841
Description 2SD1841
Feature Ordering number:EN3260A 2SB1231 : PNP Epitaxial Planar Silicon Transistor 2SD1841 : NPN Triple Diff.
Manufacture Sanyo Semiconductor Corporation
Datasheet
Download D1841 Datasheet



D1841
Ordering number:EN3260A
2SB1231 : PNP Epitaxial Planar Silicon Transistor
2SD1841 : NPN Triple Diffused Planar Silicon Transistor
2SB1231/2SD1841
100V/25A Switching Applications
w w w A. Dppa ltica aS thioe ne st 4 U . n e t
· Motor drivers, relay drivers, converters, and other
general high-current switching applications.
Features
· Large current capacity and wide ASO.
· Low saturation voltage.
Package Dimensions
unit:mm
2022A
[2SB1231/2SD1841]
( ) : 2SB1231
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VCB=(–)100V, IE=0
VEB=(–)5V, IC=0
VCE=(–)2V, IC=(–)2.5A
VCE=(–)2V, IC=(–)10A
IC=(–)10A, IB=(–)1A
IC=(–)10A, IB=(–)1A
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Ratings
(–)110
(–)100
(–)6
(–)25
(–)40
(–)8
3.0
120
150
–55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Ratings
min typ
50*
20
max
(–)0.1
(–)0.1
140*
(–)0.8
(–)1.5
Unit
mA
mA
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92098HA (KT)/71095TS/7190MH, TA (KOTO) No.3260–1/4



D1841
2SB1231/2SD1841
Parameter
Symbol
Conditions
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)1mA, IE=0
IC=(–)5mA, RBE=
IC=(–)1mA, IC=0
* : For the hFE1 of the 2SB1231/2SD1841, specify at least two ranks in principle.
50 P 100 70 Q 140
Ratings
min typ
(–)110
(–)100
(–)6
max
Unit
V
V
V
No.3260–2/4





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