Power Transistor. 2SD1841 Datasheet

2SD1841 Transistor. Datasheet pdf. Equivalent

Part 2SD1841
Description Silicon NPN Power Transistor
Feature INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1841 DESCRI.
Manufacture Inchange Semiconductor
Datasheet
Download 2SD1841 Datasheet



2SD1841
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1841
DESCRIPTION
www.Dat·aShCeeot4lUle.ncettor-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·High Current Capability
·Wide Area of Safe Operation
·Complement to Type 2SB1231
APPLICATIONS
·Designed for motor drivers, relay drivers, converters and
other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
110 V
VCEO
Collector-Emitter Voltage
100 V
wwwVEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
25 A
ICP Collector Current-Pulse
40 A
IBB Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
8A
3
W
120
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn



2SD1841
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1841
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE=
100
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
110
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
0.8 V
VBE(sat) Base -Emitter Saturation Voltage
IC= 10A; IB= 1A
ICBO Collector Cutoff Current
i.cnIEBO Emitter Cutoff Current
.iscsemhFE-1
DC Current Gain
wwwhFE-2
DC Current Gain
VCB= 100V; IE= 0
VEB= 5V; IC= 0
IC= 2.5A; VCE= 2V
IC= 10A; VCE= 2V
50
20
‹ hFE-1 Classifications
PQ
1.5 V
100 μA
100 μA
140
50-100 70-140
isc Websitewww.iscsemi.cn
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