Triode Thyristor. STF8A80 Datasheet

STF8A80 Thyristor. Datasheet pdf. Equivalent

Part STF8A80
Description Bi-Directional Triode Thyristor
Feature STF8A80 Bi-Directional Triode Thyristor www.DataSheet4U.net Symbol ○ 2.T2 Features ◆ Repetitive P.
Manufacture WINSEMI SEMICONDUCTOR
Datasheet
Download STF8A80 Datasheet



STF8A80
Bi-Directional Triode Thyristor
www.DataSheet4U.net
Features
Repetitive Peak Off-State Voltage : 800V
R.M.S On-State Current ( IT(RMS)= 8 A )
High Commutation dv/dt
Isolation Voltage ( VISO = 1500V AC )
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable require-
ments by Underwriters Laboratories Inc.
STF8A80
Symbol
2.T2
▼▲
3.Gate
1.T1
TO-220F
1
2
3
Absolute Maximum Ratings
( TJ = 25°C unless otherwise specified )
Symbol
VDRM
IT(RMS)
ITSM
I2 t
PGM
PG(AV)
IGM
VGM
VISO
TJ
TSTG
Parameter
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I2 t
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
Mass
Condition
TC = 89 °C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
A.C. 1 minute
Ratings
800
8.0
80/88
32
5.0
0.5
2.0
10
1500
- 40 ~ 125
- 40 ~ 150
2.0
Units
V
A
A
A2 s
W
W
A
V
V
°C
°C
g
Aug, 2008. Rev. A
copyright@Winsemi Semiconductor Co., Ltd., All rights reserved.
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STF8A80
STF8A80
Electrical Characteristics
Symbol
Items
IDRM
VTM
I+GT1
I -GT1
I -GT3
V+GT1
V-GT1
V-GT3
VGD
(dv/dt)c
IH
Rth(j-c)
Repetitive Peak Off-State
Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Voltage
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Conditions
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
IT = 12 A, Inst. Measurement
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
TJ = 125 °C, VD = 1/2 VDRM
TJ = 125 °C, [di/dt]c = -4.0 A/ms,
VD=2/3 VDRM
Junction to case
Ratings
Min. Typ.
Max.
Unit
─ ─ 2.0 mA
─ ─ 1.4 V
─ ─ 30
─ ─ 30 mA
─ ─ 30
─ ─ 1.5
─ ─ 1.5 V
─ ─ 1.5
0.2 ─ ─ V
10 ─ ─ V/
15 mA
─ ─ 3.7 °C/W
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