Triode Thyristor. STF8A80 Datasheet

STF8A80 Thyristor. Datasheet pdf. Equivalent

Part STF8A80
Description Bi-Directional Triode Thyristor
Feature SemiWell Semiconductor Bi-Directional Triode Thyristor www.DataSheet4U.net STF8A80 UL : E228720 Sym.
Manufacture SemiWell
Datasheet
Download STF8A80 Datasheet



STF8A80
SemiWell Semiconductor
Bi-Directional Triode Thyristor
www.DataSheet4U.net
Features
Repetitive Peak Off-State Voltage : 800V
R.M.S On-State Current ( IT(RMS)= 8 A )
High Commutation dv/dt
Isolation Voltage ( VISO = 1500V AC )
General Description
This device is fully isolated package suitable for AC switching
application, phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.
This device is approved to comply with applicable require-
ments by Underwriters Laboratories Inc.
STF8A80
UL : E228720
Symbol
2.T2
▼▲
3.Gate
1.T1
TO-220F
1 23
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(RMS)
ITSM
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
TC = 89 °C
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
I2t I2t
PGM
PG(AV)
IGM
VGM
VISO
TJ
TSTG
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
Mass
A.C. 1 minute
Ratings
800
8.0
80/88
32
5.0
0.5
2.0
10
1500
- 40 ~ 125
- 40 ~ 150
2.0
Units
V
A
A
A2s
W
W
A
V
V
°C
°C
g
Aug, 2003. Rev. 2
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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TEL:0755-83241179
Http://www.sunmoonsemi.com
TEL:020-38480873
Email:black@sunmoonsemi.com



STF8A80
STF8A80
Electrical Characteristics
Symbol
Items
IDRM
VTM
I+GT1
I -GT1
I
-
GT3
V+GT1
V-GT1
V-GT3
VGD
(dv/dt)c
IH
Rth(j-c)
Repetitive Peak Off-State
Current
Peak On-State Voltage
Gate Trigger Current
Gate Trigger Voltage
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage at Commutation
Holding Current
Thermal Impedance
Conditions
VD = VDRM, Single Phase, Half Wave
TJ = 125 °C
IT = 12 A, Inst. Measurement
VD = 6 V, RL=10 Ω
VD = 6 V, RL=10 Ω
TJ = 125 °C, VD = 1/2 VDRM
TJ = 125 °C, [di/dt]c = -4.0 A/ms,
VD=2/3 VDRM
Junction to case
Ratings
Min. Typ. Max.
Unit
─ ─ 2.0 mA
─ ─ 1.4 V
─ ─ 30
─ ─ 30 mA
─ ─ 30
─ ─ 1.5
─ ─ 1.5 V
─ ─ 1.5
0.2 ─ ─ V
10 ─ ─ V/
15 mA
─ ─ 3.7 °C/W
2/6
TEL:0755-83241179
Http://www.sunmoonsemi.com
TEL:020-38480873
Email:black@sunmoonsemi.com





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