2SD845. D845 Datasheet

D845 2SD845. Datasheet pdf. Equivalent

Part D845
Description 2SD845
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD845 DESCRIPTION ·W.
Manufacture Savant IC
Datasheet
Download D845 Datasheet



D845
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD845
DESCRIPTION
·With MT-200 package
www.Dat·aCShoeemt4Up.lneetment to type 2SB755
·High transition frequency
·High breakdown voltage :VCEO=150V(min)
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
150
150
5
12
1.2
120
150
-55~150
UNIT
V
V
V
A
A
W



D845
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD845
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=5 A;IB=0.5 A
VBE Base-emitter on voltage
IC=5A ; VCE=5V
ICBO Collector cut-off current
VCB=150V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=1A ; VCE=5V
fT Transition frequency
IC=1A ; VCE=10V
MIN TYP. MAX UNIT
150 V
5V
2.0 V
1.5 V
-50 µA
-50 µA
55 160
20 MHz
hFE classifications
RO
55-110
80-160
2





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