1090 MHz. MDS60L Datasheet

MDS60L MHz. Datasheet pdf. Equivalent

Part MDS60L
Description Pulsed Avionics 1030 - 1090 MHz
Feature MDS60L 60 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The MDS60L www.DataS.
Manufacture Microsemi Corporation
Total Page 4 Pages
Datasheet
Download MDS60L Datasheet



MDS60L
MDS60L
60 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
www.DaTtahSeheeMt4UD.nSe6t 0L is a high power COMMON BASE bipolar transistor. It is
designed for MODE-S ELM systems in the 1030 - 1090 MHz frequency band.
The transistor includes a double input prematch for broadband performance.
The device has gold thin-film metallization and diffused ballasting in a
hermetically sealed package for proven highest MTTF.
CASE OUTLINE
55AW Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25C1
120 W
Maximum Voltage and Current
Collector to Emitter Voltage (BVces)
Emitter to Base Voltage (BVebo)
Peak Collector Current (Ic)
65 V
3.5 V
4A
Maximum Temperatures
Storage Temperature
-65 to +150 C
Operating Junction Temperature
+200 C
ELECTRICAL CHARACTERISTICS @ 25C
SYMBOL
Pout
Pin
Pg
c
VSWR
Pd1
Trise1
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
Pulse Droop
Rise Time
TEST CONDITIONS
F = 1030, 1090 MHz
Vcc = 50 Volts
PW = Note 2
DF = Note 2
FUNCTIONAL CHARACTERISTICS @ 25C
BVebo
BVces
BVcbo
hFE
jc1
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Base Breakdown
DC – Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 25 mA
Ic = 25 mA
Vce = 5V, Ic = 500 mA
NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS
NOTE 2: ELM Burst: 32µSec ON/ 18µSec OFF x 48, repeated at 23mSec
Rev C: Updated June 2011
MIN
60
10
TYP
34
MAX
6
2:1
0.8
100
UNITS
W
W
dB
%
dB
nSec
3.5 V
65 V
65 V
20
0.5 C/W
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.



MDS60L
MDS60L SAMPLE RF DATA (SN#2-8; WO#56653X)
90
80
70
60
50
40
30
20
1
Pout vs Pin (ELM PULSE M OD; WO#56653X)
234 56789
Pin(W)
1030MHz
1090MHz
13.00
Gain vs Pin (ELM PULSE M OD; WO#56653X)
12.00
11.00
10.00
9.00
12 34 567 89
Pin(W)
1030MHz
1090MHz
Effic vs Pin (ELM PULSE M OD; WO#56653X)
46.0
42.0
1030MHz
1090MHz
38.0
34.0
12 3456 789
Pin(W)
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)