2SA743, 2SA743A
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SC1212 and 2SC...
2SA743, 2SA743A
Silicon
PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A
Outline
TO-126 MOD
1
1. Emitter 2. Collector 3. Base
2
3
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Symbol VCBO VCEO VEBO IC PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg
1
2SA743 –50 –50 –4 –1 0.75 8 150 –55 to +150
2SA743A –80 –80 –4 –1 0.75 8 150 –55 to +150
Unit V V V A W °C °C
2SA743, 2SA743A
Electrical Characteristics (Ta = 25°C)
2SA743 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CER I CER DC current tarnsfer ratio hFE*1 hFE Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) Min –50 –50 –4 — — 60 20 — — — Typ — — — — — 120 — Max — — — –20 — 200 — 2SA743A Min –80 –80 –4 — — 60 20 — — — Typ — — — — — 120 — Max — — — — –20 200 — V V MHz Unit V V V µA Test conditions I C = –1 mA, IE = 0 I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCE = –50 V, RBE = 1 kΩ VCE = –80 V, RBE = 1 kΩ VCE = –4 V, IC = –50 mA VCE = –4 V, IC = –1 A (pulse) VCE = –4 V, IC = –50 mA I C = –1 A, IB = –0.1 A VCE = –4 V, IC = –30 mA
–0.65 –1.0 –0.75 –1.5 120 —
–0.65 1.0 –0.75 –1.5 120 —
Gain bandwidth product f T Note: B 60 to 120
1. The 2SA743 and...