NTMS5838NL

NTMS5838NL Power MOSFET 40 V, 7.5 A, 25 mW Features Low RDS(on) Low Capacitance www.DataSheet4U.net Optimized Gate Charge These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Pulsed Drain Current TA = 25°C Steady State TA = 70°C TA = 25°C TA = 70°C TA = 25°C t ≤10 s TA = 70°C TA = 25°C TA = 70°C tp = 10 ms IDM TJ, TSTG IS EAS IAS TL PD ID PD Symbol VDSS VGS ID Value 40 ±20 5.8 4.6 1.5 1.0 7.5 6.0 2.6 1.6 30 −55 to +150 7.5 20 20 260 A °C A mJ A °C SO−8 CASE 751 STYLE 12 W A W G Unit V V A 40 V http://onsemi.com RDS(ON) MAX 25 mW @ 10 V 30.8 mW @ 4.5 V D ID MAX 7.5 A MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) S N−CHANNEL MOSFET MARKING DIAGRAM/ PIN ASSIGNMENT Source Source Source Gate 1 5838NL AYWWG G 8 Drain Drain Drain Drain Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 40 V, VGS = 10 V, L = 0.1 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) Top View = Assembly Location = Year = Work Week = Pb−Free Package* A Y WW G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses abov...