Power MOSFET. NTMS5835NL Datasheet

NTMS5835NL MOSFET. Datasheet pdf. Equivalent

Part NTMS5835NL
Description Power MOSFET
Feature NTMS5835NL Power MOSFET 40 V, 12 A, 10 mW Features • Low RDS(on) • Low Capacitance www.DataSheet4U..
Manufacture ON Semiconductor
Datasheet
Download NTMS5835NL Datasheet



NTMS5835NL
NTMS5835NL
Power MOSFET
40 V, 12 A, 10 mW
Features
Low RDS(on)
Low Capacitance
www.DataSheOetp4tUi.mneitzed Gate Charge
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Continuous Drain
C(Nuortreen1t)RqJA
Power Dissipation
RqJA (Note 1)
Pulsed Drain
Current
TA = 25°C
Steady
State
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
t 10 s
TA = 70°C
TA = 25°C
TA = 70°C
tp = 10 ms
VDSS
VGS
ID
PD
ID
PD
IDM
40
±20
9.2
7.4
1.5
1.0
12
9.6
2.6
1.6
48
Unit
V
V
A
W
A
W
A
Operating Junction and Storage
Temperature
TJ, TSTG 55 to
+150
°C
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy (VDD = 40 V, VGS = 10 V,
L = 0.1 mH)
IS
EAS
IAS
20 A
69 mJ
37 A
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
JunctiontoAmbient Steady State (Note 1)
RqJA
82
JunctiontoAmbient t 10 s (Note 1)
JunctiontoFoot (Drain) (Note 1)
RqJA
RqJF
49
21 °C/W
JunctiontoAmbient Steady State (Note 2)
RqJA
121
1. Surfacemounted on FR4 board using 1 sqin pad
(Cu area = 1.127 in sq [2 oz] including traces).
2. Surfacemounted on FR4 board using 0.155 in sq (100mm2) pad size.
http://onsemi.com
V(BR)DSS
40 V
RDS(ON) MAX
10 mW @ 10 V
14 mW @ 4.5 V
D
ID MAX
12 A
G
S
NCHANNEL MOSFET
8
1
SO8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
Source
8
Drain
Source
Drain
Source
Drain
Gate
Drain
Top View
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTMS5835NLR2G SO8 2500/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
April, 2011 Rev. 1
1
Publication Order Number:
NTMS5835NL/D



NTMS5835NL
NTMS5835NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
40
VGS = 0 V,
VDS = 40 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
V
16 mV/°C
1
100
±100
mA
nA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 10 A
VDS = 15 V, ID = 10 A
1.0 1.85 3.0
V
7.0 mV/°C
8.2 10
10.3 14
mW
10 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
VGS = 0 V, f = 1 MHz, VDS = 20 V
VGS = 10 V, VDS = 20 V; ID = 10 A
2115
315
220
40
20
50
23
pF
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS (Note 4)
QG(TH)
QGS
QGD
VGP
RG
VGS = 4.5 V, VDS = 20 V; ID = 10 A
2.0
7.0
9.5
3.3
1.2
nC
V
W
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 20 V,
ID = 10 A, RG = 2.5 W
15
45
22 ns
9.0
Forward Diode Voltage
VSD
VISGS=
=0
10
V,
A
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 10 A
Reverse Recovery Charge
QRR
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
0.9
0.785
26
13
13
17
1.2
V
ns
nC
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