Power MOSFET. NVTFS4823N Datasheet

NVTFS4823N MOSFET. Datasheet pdf. Equivalent

Part NVTFS4823N
Description Power MOSFET
Feature NVTFS4823N Power MOSFET 30 V, 10.5 mW, 30 A, Single N−Channel Features • • • • • Small Footprint (.
Manufacture ON Semiconductor
Datasheet
Download NVTFS4823N Datasheet



NVTFS4823N
NVTFS4823N
Power MOSFET
30 V, 10.5 mW, 30 A, Single NChannel
Features
Small Footprint (3.3x3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NV Prefix for Automotive and Other Applications Requiring
AECQ101 Qualified Site and Change Controls
These are PbFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
r2e,n3t,R4Y) Jmb (Notes 1,
Power Dissipation
RYJmb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
rent
& 4)
RqJA
(Notes
1,
3,
Power Dissipation
RqJA (Notes 1, 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
30
"20
30
21
21
11
13
9.0
3.1
1.6
198
55 to
175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL(pk) = 24 A, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
IS 19 A
EAS 28.8 mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
JunctiontoMounting Board (top) Steady
State (Note 2, 3)
RYJmb
7.0 °C/W
JunctiontoAmbient Steady State (Note 3)
RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD5112 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
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V(BR)DSS
30 V
RDS(on) MAX
10.5 mW @ 10 V
17.5 mW @ 4.5 V
ID MAX
30 A
NChannel
D (5 8)
G (4)
S (1, 2, 3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 4823 D
S AYWWG D
GGD
4823
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NVTFS4823NTAG WDFN8 1500/Tape & Reel
(PbFree)
NVTFS4823NTWG WDFN8 5000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
January, 2011 Rev. 0
1
Publication Order Number:
NVTFS4823N/D



NVTFS4823N
NVTFS4823N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
Zero Gate Voltage Drain Current
V(BR)DSS
IDSS
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 5)
IGSS
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 30 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage
DraintoSource On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
RDS(on)
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 15 A
VDS = 1.5 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
Total Gate Charge
QG(TOT)
SWITCHING CHARACTERISTICS (Note 6)
VGS = 0 V, f = 1.0 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V, ID = 15 A
VGS = 10 V, VDS = 15 V, ID = 15 A
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 15 A
TJ = 25°C
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
Reverse Recovery Charge
ta
tb
QRR
VGS = 0 V,
dIS/dt = 100 A/ms,
IS = 15 A
5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
Min
30
1.5
Typ Max Unit
1.0
10
"100
V
mA
nA
2.5 V
8.1 10.5 mW
13.5 17.5
34 S
750 pF
175
100
6.0 nC
0.8
2.4
2.4
12 nC
12 ns
22
14
4
0.85 1.1
V
0.72
12 ns
6.0
6.0
5.0 nC
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2





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