NVTFS5116PL

MOSFET – Power, Single P-Channel -60 V, -14 A, 52 mW NVTFS5116PL Features Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5116PLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −60 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Cur- Tmb = 25°C ID rent RYJ−mb (Notes 1, 2, 3, 4) Steady Tmb = 100°C Power Dissipation State Tmb = 25°C PD RYJ−mb (Notes 1, 2, 3) Tmb = 100°C −14 A −10 21 W 10 Continuous Drain Cur- TA = 25°C ID rent RqJA (Notes 1 & 3, 4) Steady TA = 100°C Power Dissipation RqJA (Notes 1, 3) State TA = 25°C PD TA = 100°C −6 A −4 3.2 W 1.6 Pulsed Drain Current TA = 25°C, tp = 10 ms IDM −126 A Operating Junction and Storage Temperature TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL(pk) = 30 A, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS −17 A EAS 45 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RA...