Document
SK100GH128T
Absolute Maximum Ratings Symbol Conditions IGBT
0* * *9 0( 4 1 #2 3* 4 1 !#2 3* *91 # ' * " : ! 0** 1 ;66 0< 0( : #6 0< 0* = !#66 0 4 1 !26 3* 91 # ' " : ! 1 !6 < & % 4 1 !26 3* 4 1 !#2 3* 1 #2 3* 1 76 3*
1 #2 3*"
& Values
!#66 !#6 86 #66 #6 !6
Units
0 + + + 0 >
SEMITOP 4 IGBT module
SK100GH128T
®
Inverse Diode
9 1 #2 3* 1 76 3* ;7 26 !!6 226 + + + + + AB6 CCC D!26 AB6 CCC D!#2 +*" ! C #266 3* 3* 0
Module
?9@ %4 0
Target Data
Features
!"#"$
%
&
'
() *+, -.
/*
Characteristics Symbol Conditions IGBT
0(?@ * ( 0*6
* 0*?@ * * *
9( ? @
? &&@ & && 9?4A@
() 4 1 #2 3* 9( 1 B E 9( && 1 B E K 1 $666 +K> 0** 1 ;660 *1 !66+ 4 1 !#2 3* 0( 1 !2 0 0( 1 0*" * 1 B + 0( 1 6 0" 0* 1 0* 0* 1 6 0" 0( 1 #6 0 4 1 #2 3* 4 1 !#2 3* 4 1 !#2 3* 4 1 #2 3* 4 1 !#2 3* 4 1 #23* 4 1 !#23*
1 #2 3*"
& min.
B"2
typ.
2"2 6"B
max.
;"2 6"# B66
Units
0 + + + 0 0 E E
!"! ! ; !! !"F #"! F 6";; 6"B# 2 86 $$ 2"F7 B!8 76 8"2 6"$B
!"$ !"#
Typical Applications* 0
* 1 !66 +" 0( 1 !2 0 4 1 #23* %C 4 1 !#23* %C 0* 1 #2" 0( 1 6 0 & 1 ! GH
#"$
0 0 I J J LK-
GH-T
1
10-09-2008 DIL
© by SEMIKRON
SK100GH128T
Characteristics Symbol Conditions Inverse Diode
0 1 0* 06
99 M
1 !66 + K 1 $666 +K> 0**1;660
1 +< 0( 1 0 4 1 3* %C 4 1 3* 4 1 3* 1 + 4 1 3* 1 22 +< 0( 1 6 0 4 1 #2 3* %C 4 1 !#2 3* %C 4 1 !#2 3* 4 1 !#2 3* 4 1 !#2 3*
min.
typ.
# !"8 !"# !6"F !#2 #2 $";; 6"7
max.
#"2 #"$
Units
0 0 0 E + >* J
SEMITOP®4 IGBT module
SK100GH128T
9?4A@. 0 1 0* 06
99 M
6"82
LK0 0 0 + >* J LK-
Freewheeling Diode
Target Data
N #"2 ;6 1 !663* ?9#212NE@ BF$O2P #"72
/ I
Features
%
&
() *+, -.
/*
'
!"#"$
Temperature sensor
9!66
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
Typical Applications* 0
GH-T
2
10-09-2008 DIL
© by SEMIKRON
SK100GH128T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
10-09-2008 DIL
© by SEMIKRON
SK100GH128T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
10-09-2008 DIL
© by SEMIKRON
SK100GH128T
UL recognized file no. E 63 532
* 8B ?
" *)" &
Q # @
* 8B
(GA
5
10-09-2008 DIL
© by SEMIKRON
.