2SA812

DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES Complementary to 2SC1623A High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −50 V Emitter to Base Voltage VEBO −5.0 V Collector Current (DC) IC −100 mA Total Power Dissipation PT 200 mW Junction Temperature Tj 150 °C Storage Temperature Range Tstg −55 to +150 °C PACKAGE DRAWING (Unit: mm) ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Saturation Voltage Base to Emitter Voltage Gain Bandwidth Product Output Capacitance SYMBOL ICBO IEBO hFE VCE(sat) VBE fT Cob MIN. 90 −0.58 Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2% TYP. 200 −0.18 −0.62 180 4.5 MAX. −0.1 −0.1 600 −0.3 −0.68 hFE CLASSIFICATION Marking hFE M4 90 to 180 M5 135 to 270 M6 200 to 400 M7 300 to 600 UNIT μA μA V V MHz pF 1. Emitter 2. Base 3. Collector TEST CONDITIONS VCB = −60 V, IE = 0 A VEB = −5.0 V, IC = 0 A VCE = −6.0 V, IC = −1.0 mANote IC = −100 mA, IB = −10 mA VCE = 6.0 V, IC = −1.0 mA VCE = −6.0 V, IE = 10 mA VCB = −10 V, IE = 0 A, f = 1.0 MHz The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every co...