IGBT inverter. SKAI90A2GD06-W12DI Datasheet

SKAI90A2GD06-W12DI inverter. Datasheet pdf. Equivalent

Part SKAI90A2GD06-W12DI
Description Three-phase IGBT inverter
Feature SKAI 90 A2 GD06-W12DI Characteristics Symbol Visol VCC Conditions DC, t = 1 s DC supply voltage rms.
Manufacture Semikron International
Datasheet
Download SKAI90A2GD06-W12DI Datasheet



SKAI90A2GD06-W12DI
SKAI 90 A2 GD06-W12DI
HV SKAI 2
Three-phase IGBT inverter
SKAI 90 A2 GD06-W12DI
Target Data
Features
• Optimized for HEV and EV
• high power density
• high overload capability
• Compact integration in IP67 Enclosure:
V, I, T sensors
Gate driver with protection features
EMI filters
Liquid cooling
DC link capacitor
Typical Applications*
• commercial application vehicle
• hybrid vehicle
• battery driven vehicle
No. 14282013
Characteristics
Symbol Conditions
Electrical Data
Visol DC, t = 1 s
VCC DC supply voltage
rms @ rated conditions: dV/dt = 10l/
min, 50% Glykol/ 50% H20, fsw = 4kHz,
Inom VCC = 350V, Vout = 200V, fout = 50 Hz,
cos(phi) = 0.85, M = 0.93,
Tcoolant = 65 °C, Tair = 65 °C
fsw Switching frequency
CDC DC Bus Capacitance
Cy EMI Capacitor; DC to enclosure
RF DC+ to enclosure, DC- to enclosure
RBL DC+ to DC-
Mechanical Data
Weight
Height
Width
Length
Mt AC / DC terminals (M8 screw)
Mc
Cover of terminal box (M5x16
flat-head-screw)
Mcg AC / DC cable glands (recommended)
Me
Assembly of
M8 screw
enclosure;
thread (l): > 15mm M6 screw
Mgnd
Ground connection
Hydraulical Data
dp
Pressure drop@ 10l/min,
Tcoolant = 25°C
p Operating pressure
P
Power dissipation to coolant; rated
conditions
Environmental Data
Tstg
Tno
Tair
Tcoolant
IP
storage temperature
Non operating temperature range
Operating range, derating for
Tair > 85°C
Operating range, derating for
Tcoolant > 65°C
Enclosure protection level
With external connector protection
Altitude VCC =450 V
min.
1
0.9
13
3.5
13
-40
-40
-40
-40
typ.
3000
350
300
0.66
7.5
1
15
109
244
475
14
4
10
14
100
1.9
IP67
IP6K9K
max. Unit
V
450 V
A
15 kHz
1.25 mF
µF
M
M
kg
mm
mm
mm
15 Nm
4.5 Nm
Nm
20 Nm
14 Nm
15 Nm
mbar
2 bar
kW
85 °C
105 °C
105 °C
75 °C
5000
m
HV SKAI 2
© by SEMIKRON
Rev. 10 – 20.04.2011
1



SKAI90A2GD06-W12DI
SKAI 90 A2 GD06-W12DI
HV SKAI 2
Three-phase IGBT inverter
SKAI 90 A2 GD06-W12DI
Target Data
Features
• Optimized for HEV and EV
• high power density
• high overload capability
• Compact integration in IP67 Enclosure:
V, I, T sensors
Gate driver with protection features
EMI filters
Liquid cooling
DC link capacitor
Typical Applications*
• commercial application vehicle
• hybrid vehicle
• battery driven vehicle
No. 14282013
Characteristics
Symbol Conditions
min.
typ.
Interface parameters
Vs
ISO
IS
ViH
ViL
tPOR
tpRESET
Auxiliary supply current primary side
without driving a gate (Vs = 12 V)
Auxiliary supply current primary side,
driving the gates (Vs = 12 V)
Input signal voltage (HIGH)
Input signal voltage (LOW)
Power-on reset completed
Error reset time
8
0.7 * Vs
GND - 0.3
Controller switching parameters
td(on)IO
td(off)IO
tjitter
tSIS
tet
td(err)DSCP
Input-output turn-on propagation time
Input-output turn-off propagation time
Signal transfer prim - sec (total jitter)
Short pulse suppression time
Input impulse extension time
Error input-output propagation time for
DSCP error
0.2
0.9
0.2
td(err)OCP
Error input-output propagation time for
OCP error
td(err)TMP
Error input-output propagation time for
temperature error
tTD Top-Bot interlock dead time
tbl VCE monitoring blanking time
Protection functions
TPCBtrip
Over temperature protection trip level
(PCB)
100
TCStrip
Over temperature protection trip level
on ceramic-substrate
120
TRelPCBtrip
Release temperature for PCB
overtemperature trip level
90
TRelCStrip
Release temperature for ceramic
substrate overtemperature trip level
85
VDCtrip
Trip level of DC-link voltage monitoring 450
VVStrip
Under voltage protection trip level of
board primary side
VVSrst
Threshold voltage level for driver reset
after failure event
8
ITRIPSC
Overcurrent trip level
Ioutsens
AC sensing range
mIoutsens Gradient of output current sensing
BWIoutsens Bandwidth (3 dB) of AC current sensing
VDCsens Measurable DC-link voltage
mVDCsens Gradient of DC-link voltage sensing
BWVDCsens
Bandwidth (3 dB) of DC-link voltage
sensing
850
-924
10.8
0
19.669
TCSsens
Temperature sensing range on ceramic
substrate
30
mTCSsens
Gradient of temperature sensing on
ceramic-substrate
BWTCSsens
Bandwidth of temperature sensing on
ceramic-substrate
12
0.1
0.5
0.5
0.25
1
4
4
5
11.13
17
20.067
0.25
83.3
100
max. Unit
16 V
900 mA
3000
Vs + 0.3
0.3 * Vs
0.9
3
mA
V
V
s
s
0.6 µs
0.6 µs
50 ns
0.3 µs
1.1 µs
1 µs
10 µs
50 ms
4.1 µs
5.1 µs
°C
°C
°C
°C
V
7V
V
924
11.47
600
20.472
APEAK
A
mV/A
kHz
V
mV/V
kHz
150 °C
mV/°C
Hz
HV SKAI 2
2
Rev. 10 – 20.04.2011
© by SEMIKRON





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)