SUM60N08-07C

SUM60N08-07C Vishay Siliconix N-Channel 75-V (D-S) MOSFET with Sense Terminal FEATURES PRODUCT SUMMARY V(BR)DSS www.DataSheet4U.net 75 (V) rDS(on) (W) 0.007 @ VGS = 10 V ID (A) 60a D TrenchFETr Power MOSFET Plus Current Sense D New Low Thermal Resistance Package APPLICATIONS D Automotive D Industrial D2PAK-5 D (Tab, 3) (1) G 1 2 3 4 5 SENSE S (5) G KELVIN D S SENSE N-Channel MOSFET (4) (2) KELVIN ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)d Pulsed Drain Current Continous Diode Current (Diode Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C TA = 25_C Conduction)d TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IS IAR EAR PD TJ, Tstg Limit 75 "20 60a 60a 240 60a 60a 180 300c 3.75d - 55 to 175 Unit V A mJ W _C Maximum Power Dissipationa Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientd Junction-to-Case Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71834 S-03076—Rev. C, 03-Feb-03 www.vishay.com PCB Mountd Symbol RthJA RthJC Limit 40 0.5 Unit _C/W 1 SUM60N08-07C Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS ...