D-S MOSFET. SUM60N08-07C Datasheet

SUM60N08-07C MOSFET. Datasheet pdf. Equivalent

Part SUM60N08-07C
Description N-Channel 75-V (D-S) MOSFET
Feature SUM60N08-07C Vishay Siliconix N-Channel 75-V (D-S) MOSFET with Sense Terminal FEATURES PRODUCT SUMM.
Manufacture Vishay Siliconix
Datasheet
Download SUM60N08-07C Datasheet



SUM60N08-07C
SUM60N08-07C
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET with Sense Terminal
PRODUCT SUMMARY
www.DataShVee(Bt4RU).DneStS (V)
75
rDS(on) (W)
0.007 @ VGS = 10 V
ID (A)
60a
FEATURES
D TrenchFETr Power MOSFET Plus Current
Sense
D New Low Thermal Resistance Package
APPLICATIONS
D Automotive
D Industrial
D2PAK-5
D (Tab, 3)
12345
G DS
KELVIN
SENSE
(1)
G
(2)
(4)
SENSE
S (5)
N-Channel MOSFET
KELVIN
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)d
Pulsed Drain Current
Continous Diode Current (Diode Conduction)d
Avalanche Current
Repetitive Avalanche Energyb
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 100_C
L = 0.1 mH
TC = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IS
IAR
EAR
PD
TJ, Tstg
75
"20
60a
60a
240
60a
60a
180
300c
3.75d
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Junction-to-Ambientd
Junction-to-Case
Parameter
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71834
S-03076—Rev. C, 03-Feb-03
PCB Mountd
Symbol
RthJA
RthJC
Limit
40
0.5
Unit
_C/W
www.vishay.com
1



SUM60N08-07C
SUM60N08-07C
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 mA
VDS = VGS, IDS = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125_C
VDS = 60 V, VGS = 0 V, TJ = 175_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 25 A
VGS = 10 V, ID = 25 A, TJ = 125_C
VGS = 10 V, ID = 25 A, TJ = 175_C
VDS = 15 V, ID = 20 A
75
2
120
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 35 V, VGS = 10 V, ID = 60 A
VDD = 35 V, RL = 0.6 W
ID ] 60 A, VGEN = 10 V, RG = 2.5 W
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
Pulsed Current
Forward Voltagea
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Is
ISM
VSD
trr
IRM(REC)
Qrr
IF = 60 A, VGS = 0 V
IF = 60 A, di/dt = 100 A/ms
Current Sense Characteristics
Current Sensing Ratio
r
Mirror Active Resistance
rm(on)
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
ID = 3.5 A, VGSS = 10 V, RSENSE = 2.0 W
VGS = 10 V, ID = 10 mA
2270
Typ Max Unit
4
"100
1
50
500
0.0054
100
0.007
0.010
0.013
V
nA
mA
A
W
S
6500
920
400
110
30
30
15
130
75
120
150
20
200
115
180
pF
nC
ns
1.0
75
3.5
0.13
60
240
1.5
115
5
0.29
A
V
ns
A
mC
2370
10
2470
W
www.vishay.com
2
Document Number: 71834
S-03076Rev. C, 03-Feb-03





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