2SA838

Transistor 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q High transition frequency fT. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg (Ta=25˚C) Ratings –30 –20 –5 –30 250 150 –55 ~ +150 Unit V V V mA mW ˚C ˚C 13.5±0.5 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise figure Reverse transfer impedance Common emitter reverse transfer capacitance (Ta=25˚C) Symbol ICBO ICEO IEBO hFE* VCE(sat) VBE fT NF Zrb Cre Conditions VCB = –10V, IE = 0 VCE = –20V, IB = 0 VEB = –5V, IC = 0 VCE = –10V, IC = –1mA IC = –10mA, IB = –1mA VCE = –10V, IC = –1mA VCB = –10V, IE = 1mA, f = 200MHz VCB = –10V, IE = 1mA, f = 5MHz VCE = –10V, IC = –1mA, f = 2MHz VCE = –10V, IC = –1mA, f = 10.7MHz 150 70 – 0.1 – 0.7 300 2.8 22 1.2 4.0 50 2.0 min typ max – 0.1 –100 –10 220 V V MHz dB Ω pF Unit µA µA *h FE Rank classification B 70 ~ 140 C 110 ~ 220 hFE Rank 1 Transistor PC — Ta 500 –30 Ta=25˚C 450 –25 2SA838 IC — VCE Collector to ...