2SA844

2SA844 Silicon PNP Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA844 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings –55 –55 –5 –100 100 300 150 –55 to +150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –55 –55 –5 — — 1 Typ — — — — — — –0.1 –0.66 200 2.0 Max — — — –100 –50 800 –0.5 –0.75 — — Unit V V V nA nA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –18 V, IE = 0 VEB = –2 V, IC = 0 VCE = –12 V, IC = –2 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: C 160 to 320 D 250 to 500 E 400 to 800 V(BR)EBO I CBO I EBO hFE* 160 — — — — VCE(sat) VBE fT Cob V V MHz pF I C = –10 mA, IB = –1 mA VCE = –12 V, IC = –2 mA VCE = –12 V, IE = –2 mA VCB = –10 V, IE = 0, f = 1 MHz 1. The 2SA844 is grouped by hFE as follows. See characteristic curves of 2SA836. 2 2SA844 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 200 100 0...