N-Channel FREDFET. APT39F60J Datasheet

APT39F60J FREDFET. Datasheet pdf. Equivalent

Part APT39F60J
Description N-Channel FREDFET
Feature APT39F60J 600V, 42A, 0.11Ω Max trr ≤290ns N-Channel FREDFET Power MOS 8™ is a high speed, high volt.
Manufacture Microsemi Corporation
Datasheet
Download APT39F60J Datasheet



APT39F60J
APT39F60J
600V, 42A, 0.11Ω Max trr 290ns
N-Channel FREDFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
SS
G D SOT-227
ISOTOP®
"UL Recognized"
file # E145592
APT39F60J
D
Single die FREDFET G
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS
TJ,TSTG
VIsolation
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
WT Package Weight
Torque Terminals and Mounting Screws.
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Ratings
42
26
210
±30
1580
28
Unit
A
V
mJ
A
Min
-55
2500
Typ Max Unit
480 W
0.26
°C/W
0.15
150 °C
V
1.03 oz
29.2 g
10 in·lbf
1.1 N·m



APT39F60J
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
VBR(DSS)
ΔVBR(DSS)/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)/ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
VGS = 10V, ID = 28A
VGS = VDS, ID = 2.5mA
600
2.5
IDSS Zero Gate Voltage Drain Current
VDS = 600V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS Gate-Source Leakage Current
VGS = ±30V
APT39F60J
Typ Max Unit
V
0.57 V/°C
0.09 0.11
Ω
45V
-10 mV/°C
250
1000
µA
±100 nA
Dynamic Characteristics
Symbol
gfs
Ciss
Crss
Coss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TJ = 25°C unless otherwise specified
Test Conditions
Min
VDS = 50V, ID = 28A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 400V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 28A,
VDS = 300V
Resistive Switching
VDD = 400V, ID = 28A
RG = 2.2Ω 6 , VGG = 15V
Typ
55
11300
115
1040
550
285
280
60
120
65
75
190
60
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
Test Conditions
Min Typ Max Unit
IS
ISM
VSD
trr
Qrr
Irrm
dv/dt
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 28A, TJ = 25°C, VGS = 0V
TJ = 25°C
ISD = 28A 3
diSD/dt = 100A/µs
TJ = 125°C
TJ = 25°C
TJ = 125°C
VDD = 100V
TJ = 25°C
TJ = 125°C
ISD 28A, di/dt 1000A/µs, VDD = 400V,
TJ = 125°C
42
A
210
1.0
255 290
450 540
1.41
3.66
10.7
15.8
V
ns
µC
A
20 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 4.03mH, RG = 25Ω, IAS = 28A.
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -1.10E-7/VDS^2 + 4.60E-8/VDS + 1.72E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.





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