Document
Transistor
2SA879
Silicon PNP epitaxial planer type
For general amplification Complementary to 2SC1573
Unit: mm
5.9± 0.2 4.9± 0.2
q
High collector to emitter voltage VCEO.
+0.3 +0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(Ta=25˚C)
2.54± 0.15
Ratings –250 –200 –5 –100 –70 1 150 –55 ~ +150
Unit V V V mA mA
0.45–0.1 1.27
13.5± 0.5
0.7–0.2
0.7± 0.1
8.6± 0.2
s Features
0.45–0.1 1.27
+0.2
˚C ˚C
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO VCEO VEBO hFE* VCE(sat) fT Cob Conditions VCB = –12V, IB = 0 IC = –100µA, IB = 0 IE = –1µA, IC = 0 VCE = –10V, IC = –5mA IC = –50mA, IB = –5mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz 50 80 5 10 –200 –5 60 220 –1.5 V MHz pF min typ max –2 Unit µA V V
*h
FE
Rank classification
Q 60 ~ 150 R 100 ~ 220 hFE
Rank
3.2
W
1
2
3
1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package
1
Transistor
PC — Ta
1.2 –120 Ta=25˚C
2SA879
IC — VCE
–120 VCE=–10V Ta=25˚C –100
IC — IB
Collector power dissipation PC (W)
1.0
–100
Collector current IC (mA)
0.8
–80
Collector current IC (mA)
IB=–2mA –1.8mA –1.6mA –1.4mA –1.2mA –1.0mA – 0.8mA
–80
0.6
–60 – 0.6mA –40 – 0.4mA
–60
0.4
–40
0.2
–20
– 0.2mA
–20
0 0 20 40 60 80 100 120 140 160
0 0 –2 –4 –6 –8 –10
0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0 –2.4
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
IB — VBE
–2.4 VCE=–10V Ta=25˚C –2.0 –100 –120
IC — VBE
Collector to emitter saturation voltage VCE(sat) (V)
–100 –30 –10 –3 –1 VCE=–10V 25˚C Ta=75˚C –80 –25˚C
VCE(sat) — IC
IC/IB=10
–1.6
–1.2
Collector current IC (mA)
Base current IB (mA)
–60
– 0.8
–40
– 0.3 – 0.1 – 0.03 – 0.01 – 0.1 – 0.3
25˚C
Ta=75˚C
–25˚C
– 0.4
–20
0 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2
0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0
–1
–3
–10
–30
–100
Base to emitter voltage VBE (V)
Base to emitter voltage VBE (V)
Collector current IC (mA)
hFE — IC
300 VCE=–10V 160 140 120 100 80 60 40 20 0 – 0.1 – 0.3 0 0.1
fT — IE
16 VCB=–10V f=100MHz Ta=25˚C
Cob — VCB
Collector output capacitance Cob (pF)
f=1MHz IE=0 Ta=25˚C
Forward current transfer ratio hFE
250
Transition frequency fT (MHz)
14 12 10 8 6 4 2 0 –1
200 Ta=75˚C 150 25˚C 100 –25˚C
50
–1
–3
–10
–30
–100
0.3
1
3
10
30
100
–3
–10
–30
–100
Collector current IC (mA)
Emitter current IE (mA)
Collector to base voltage VCB (V)
2
Transistor
IEBO — Ta
10000 3000 1000 VEB=–5V 10000 3000 1000
2SA879
ICBO — Ta
VCB=–250V –1000 –300
Area of safe operation (ASO)
Single pulse Ta=25˚C
Collector current IC (mA)
–100 –30
ICP IC t=1s t=10ms
300 100 30 10 3 1 0 40 80 120 160 200
ICBO (Ta) ICBO (Ta=25˚C)
IEBO (Ta) IEBO (Ta=25˚C)
300 100 30 10 3 1 0 40 80 120 160 200
–10 –3 –1
– 0.3 – 0.1 –1
–3
–10
–30
–100 –300 –1000
Ambient temperature Ta (˚C)
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
3
.