DatasheetsPDF.com

2SA893A

Hitachi Semiconductor

Silicon PNP Epitaxial Transistor

2SA893, 2SA893A Silicon PNP Epitaxial Application • Low frequency high voltage amplifier • Complementary pair with 2SC1...


Hitachi Semiconductor

2SA893A

File Download Download 2SA893A Datasheet


Description
2SA893, 2SA893A Silicon PNP Epitaxial Application Low frequency high voltage amplifier Complementary pair with 2SC1890/A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA893, 2SA893A Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SA893 –90 –90 –5 –50 300 150 –55 to +150 2SA893A –120 –120 –5 –50 300 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) 2SA893 Item Collector to emitter breakdown voltage Collector cutoff current Symbol V(BR)CEO I CBO 1 2SA893A Max — –0.5 — 800 Min Typ Max — — –0.5 800 –0.75 V –0.5 — — 10 V MHz pF dB Unit V µA µA Test conditions I C = –1 mA, RBE = ∞ VCB = –75 V, IE = 0 VCB = –100 V, IE = 0 VCE = –12 V, I C = –2 mA VCE = –12 V, I C = –2 mA I C = –10 mA, I B = –1 mA VCE = –12 V, I C = –2 mA VCB = –25 V, IE = 0, f = 1 MHz VCE = –6 V, I C = –50 µA Rg = 50 kΩ, f = 1 kHz Min –90 — — Typ — — — — — — 120 1.8 2 –120 — — — 250 — — — — — 120 1.8 2 DC current transfer ratio hFE* Base to emitter voltage VBE Collector to emitter saturation voltage 250 — — — — — –0.75 — –0.5 — — 10 — — — — VCE(sat) Gain bandwidth product f T Collector output capacitance Noise figure Cob NF Note: D 1. The 2SA893/A is grouped by h FE as follows. E 400 to 800 250 to 500 See characteristic curves of 2SA872 and 2SA872A 2 2SA893, 2S...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)