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IXTH68N20 Dataheets PDF



Part Number IXTH68N20
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description Power MOSFET
Datasheet IXTH68N20 DatasheetIXTH68N20 Datasheet (PDF)

High Current MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTK 74 N20 IXTH 68 N20 200 V 200 V ID25 RDS(on) 74 A 35 mW 68 A 35 mW Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg Md Weight Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-264 TO-247 Test conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 74N20 68N20 74N20 68N20 74N20 68N20 Maximum ratings 200 200 ±20 ±30 74 6.

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High Current MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTK 74 N20 IXTH 68 N20 200 V 200 V ID25 RDS(on) 74 A 35 mW 68 A 35 mW Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg Md Weight Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-264 TO-247 Test conditions TJ = 25°C to 150°C Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 74N20 68N20 74N20 68N20 74N20 68N20 Maximum ratings 200 200 ±20 ±30 74 68 296 272 416 300 150 -55 ... +150 1.13/10 10 6 300 V V V V A A A A W W °C °C °C Nm/lb.in. g g °C G = Gate S = Source G D S TO-247AD (IXTH) TJ = 25°C to 150°C; RGS = 1.0 MΩ D (TAB) TO-264 AA (IXTK) D (TAB) -55 ... +150 D = Drain Tab = Drain Features • • • • Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure International standard package Fast switching times Symbol Test Conditions Characteristic Values Min. Typ. 200 2.0 4.0 ±100 TJ = 25°C TJ = 125°C 500 3 35 Max. V V nA µA mA mΩ (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 5 mA VDS = VGS, ID = 4 mA VGS = ±20 V DC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V Applications • • • • Motor controls DC choppers Uninterruptable Power Supplies (UPS) Switch-mode and resonant-mode Advantages • Easy to mount with one screw (isolated mounting screw hole) • Space savings • High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 ms, duty cycle d ≤ 2% IXYS reserves the right to change limits, test conditions and dimensions. 95512C (12/97) C2 - 14 www.DataSheet4U.net © 1998 IXYS All rights reserved IXTH 68N20 IXTK 74N20 Symbol Test Conditions (T J = 25°C unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK TO-247 AD 0.15 TO-264 AA 0.15 0.35 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 Ω (External) VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = 0.5 ID25, pulse test Characteristic values Min. Typ. Max. 35 42 5450 1275 630 30 230 180 50 300 75 100 0.30 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W K/W Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 AD (IXTH) Outline Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC C2 Source-Drain Diode Symbol IS ISM VSD trr Test Conditions VGS = 0 Ratings and Characteristics (TJ = 25°C unless otherwise specified) Min. Typ. Max. 74N20 68N20 74N20 68N20 74 68 296 272 1.5 600 A A A A V ns TO-264 AA Outline Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = IS, -di/dt = 100 A/µs, VR = 100V Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: © 1998 IXYS All rights reserved 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 C2 - 15 .


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