Current MegaMOSFET. IXTK68N20 Datasheet

IXTK68N20 MegaMOSFET. Datasheet pdf. Equivalent

Part IXTK68N20
Description High Current MegaMOSFET
Feature High Current MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTK 74 N20 IXTH 68 N20 200 V 200 V ID25.
Manufacture IXYS Corporation
Datasheet
Download IXTK68N20 Datasheet



IXTK68N20
High Current
MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 74 N20
IXTH 68 N20
VDSS
200 V
200 V
ID25
74 A
68 A
RDS(on)
35 mW
35 mW
Preliminary data
Symbol Test conditions
VDSS
VDGR
VGS
VGSM
ID25
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1.0 M
Continuous
Transient
TC = 25°C
IDM TC = 25°C, pulse width limited by TJM
PD TC = 25°C
TJ
TJM
Tstg
Md
Weight
Mounting torque
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum ratings
74N20
68N20
74N20
68N20
74N20
68N20
200
200
±20
±30
74
68
296
272
416
300
V
V
V
V
A
A
A
A
W
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
TO-264
TO-247
10
6
g
g
300 °C
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VDSS
VGS = 0 V, ID = 5 mA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS VGS = ±20 V DC, VDS = 0
IDSS VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 ms, duty cycle d 2%
Characteristic Values
Min. Typ.
Max.
200 V
2.0 4.0 V
±100 nA
500 µA
3 mA
35 m
TO-247AD (IXTH)
TO-264 AA (IXTK)
D (TAB)
G
D
S
G = Gate
S = Source
D = Drain
Tab = Drain
D (TAB)
Features
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• International standard package
• Fast switching times
Applications
• Motor controls
• DC choppers
• Uninterruptable Power Supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• Easy to mount with one screw
(isolated mounting screw hole)
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions and dimensions.
C2 - 14
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95512C (12/97)
© 1998 IXYS All rights reserved



IXTK68N20
IXTH 68N20
IXTK 74N20
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs VDS = 10 V; ID = 0.5 ID25, pulse test
Characteristic values
Min. Typ. Max.
35 42
S
Ciss
5450
pF
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
1275
pF
Crss 630 pF
td(on)
tr
td(off)
tf
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 1 (External)
30
230
180
50
ns
ns
ns
ns
Qg(on)
Qgs
Qgd
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
300
75
100
nC
nC
nC
RthJC
RthCK
TO-264 AA
0.30 K/W
0.15
K/W
RthJC
RthCK
TO-247 AD
0.35 K/W
0.15
K/W
Source-Drain Diode
Symbol Test Conditions
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
IS VGS = 0
74N20
68N20
74 A
68 A
ISM Repetitive; pulse width limited by TJM 74N20 296 A
68N20
272 A
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
1.5 V
trr IF = IS, -di/dt = 100 A/µs, VR = 100V
600 ns
TO-247 AD (IXTH) Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-264 AA Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min. Max.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
5.13
2.89
2.10
1.42
2.69
3.09
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
0.00
20.32
2.29
3.17
0.25
20.83
2.59
3.66
6.07
8.38
3.81
1.78
6.04
6.27
8.69
4.32
2.29
6.30
1.57 1.83
Inches
Min. Max.
.190
.100
.079
.044
.094
.114
.021
.202
.114
.083
.056
.106
.122
.033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000
.800
.090
.125
.010
.820
.102
.144
.239
.330
.150
.070
.238
.247
.342
.170
.090
.248
.062 .072
C2
©IXYS19MO9S8FEIXTsYanSd IAGBllTsriagrehctosverreedsbey rovneeodf the following U.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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