Channel IGBT. GT40T302 Datasheet

GT40T302 IGBT. Datasheet pdf. Equivalent

Part GT40T302
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Feature GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonan.
Manufacture Toshiba Semiconductor
Datasheet
Download GT40T302 Datasheet



GT40T302
GT40T302
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T302
Parallel Resonance Inverter Switching Applications
Unit: mm
FRD included between emitter and collector
Enhancement mode
High speed IGBT: tf = 0.23 μs (typ.) (IC = 40 A)
FRD: trr = 0.7 μs (typ.) (di/dt = 20 A/μs)
Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
Diode forward current
DC
1 ms
DC
1 ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
1500
±25
40
80
30
80
200
150
55 to 150
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit
Marking
Gate
Collector
Emitter
TOSHIBA
GT40T302
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead(Pb)-Free Finish
www.DataSheet4U.net
1 2008-12-26



GT40T302
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Diode forward voltage
Reverse recovery time
Thermal resistance
Symbol
Test Condition
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
VF
trr
Rth (j-c)
VGE = ±25 V, VCE = 0
VCE = 1500 V, VGE = 0
IC = 40 mA, VCE = 5 V
IC = 40 A, VGE = 15 V
VCE = 10 V, VGE = 0, f = 1 MHz
15 V
0
15 V
51 Ω
600 V
IF = 30 A, VGE = 0
IF = 30 A, VGE = 0, di/dt = −20 A/μs
IGBT
Diode
GT40T302
Min Typ. Max Unit
⎯ ⎯ ±500 nA
⎯ ⎯ 1.0 mA
4.0 7.0 V
3.7 5.0
V
2900
pF
0.40
0.45
μs
0.23 0.40
0.6
1.9 2.5
V
0.7 3.0 μs
⎯ ⎯ 0.625
°C/W
⎯ ⎯ 1.25
2 2008-12-26





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)