GT40T302

GT40T302 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T302 Parallel Resonance Inverter Switching Applications Unit: mm FRD included between emitter and collector Enhancement mode High speed IGBT: tf = 0.23 μs (typ.) (IC = 40 A) FRD: trr = 0.7 μs (typ.) (di/dt = −20 A/μs) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1500 ±25 40 80 30 80 200 150 −55 to 150 Unit V V A Diode forward current A W °C °C JEDEC JEITA TOSHIBA ― ― 2-21F2C Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Weight: 9.75 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Marking Part No. (or abbreviation code) TOSHIBA Gate GT40T302 Lot No. JAPAN Emitter A ...