N-Channel MOSFET. SUM60N02-3M9P Datasheet

SUM60N02-3M9P MOSFET. Datasheet pdf. Equivalent

Part SUM60N02-3M9P
Description N-Channel MOSFET
Feature SUM60N02-3m9P Vishay Siliconix N-Channel 20-V (D-S) 175 °C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 20 .
Manufacture Vishay Siliconix
Total Page 6 Pages
Datasheet
Download SUM60N02-3M9P Datasheet



SUM60N02-3M9P
SUM60N02-3m9P
Vishay Siliconix
N-Channel 20-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
0.0039 at VGS = 10 V
20
0.0052 at VGS = 4.5 V
ID (A)a
60
60
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• OR-ing
D
RoHS
COMPLIANT
TO-263
G DS
Top View
DRAIN connected to TAB
Ordering Information: SUM60N02-3m9P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 100 °C
ID
Pulsed Drain Current
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TA = 25 °Cd
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
20
± 20
60a
60a
120
50
125
120c
3.75
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)d
Junction-to-Case
Notes:
a. Package limited.
b. Duty cycle 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
Document Number: 69820
www.DaSta-8S0h1e8et34-UR.enve.tA, 04-Feb-08
Symbol
RthJA
RthJC
Limit
40
1.25
Unit
°C/W
www.vishay.com
1



SUM60N02-3M9P
SUM60N02-3m9P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VDS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 125 °C
VDS = 20 V, VGS = 0 V, TJ = 175 °C
VDS 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125 °C
VGS = 10 V, ID = 20 A, TJ = 175 °C
VGS = 4.5 V, ID = 20 A
VDS = 10 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 10 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargeb
Qg
Gate-Source Chargeb
Qgs VDS = 10 V, VGS = 4.5 V, ID = 50 A
Gate-Drain Chargeb
Qgd
Gate Resistance
Rg
Turn-On Delay Timeb
td(on)
Rise Timeb
Turn-Off Delay Timeb
tr
td(off)
VDD = 10 V, RL = 0.2 Ω
ID 50 A, VGEN = 10 V, Rg = 1.0 Ω
Fall Timeb
tf
Source-Drain Diode Ratings and Characteristics TC = 25 °Cc
Continuous Current
IS
Pulsed Current
ISM
Forward Voltagea
VSD IF = 20 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current IRM IF = 20 A, di/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
20
V
1.0 3
± 100
nA
1
50 µA
250
100 A
0.0031 0.0039
0.0059
0.007
Ω
0.0042 0.0052
95 S
0.75
5950
985
365
33
18
7
1.5
15
7
35
8
50
2.3
25
11
55
12
pF
nC
Ω
ns
0.85
45
1.7
0.039
60
100
1.5
90
3.4
0.155
A
V
ns
A
µC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69820
S-80183-Rev. A, 04-Feb-08





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