Mode MOSFET. APM4052DU4 Datasheet

APM4052DU4 MOSFET. Datasheet pdf. Equivalent

Part APM4052DU4
Description Dual Enhancement Mode MOSFET
Feature APM4052DU4 Dual Enhancement Mode MOSFET (N- and P-Channel) Features • N-Channel 40V/7.5A, RDS(ON)= .
Manufacture Anpec
Datasheet
Download APM4052DU4 Datasheet



APM4052DU4
APM4052DU4
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
N-Channel
40V/7.5A,
RDS(ON)= 30m(typ.) @ VGS= 10V
RDS(ON)= 46m(typ.) @ VGS= 5V
P-Channel
-40V/-6A,
R=
DS(ON)
40m
(typ.)
@
V=
GS
-10V
R=
DS(ON)
52m
(typ.)
@
V=
GS
-5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available (RoHS
Compliant)
Pin Description
D1
D2
S1
G1
S2
G2
Top View of TO-252-4
(3) (3)
D1 D2
(2) (5)
G1 G2
Applications
Power Management in LCD monitor/TV
S1
(1)
N MOS
S2
(4)
P MOS
Ordering and Marking Information
APM4052D
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U4 : TO-252-4
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM4052D U4 : APM4052D
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.3 - Jan., 2009
1
www.anpec.com.tw
www.DataSheet4U.net



APM4052DU4
APM4052DU4
Absolute Maximum Ratings (T = 25°C unless otherwise noted)
A
Symbol
Parameter
VDSS Drain-Source Voltage
VGSS
ID a
IDM a
IS a
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
TC=25°C
TC=25°C
TC=25°C
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
PD Power Dissipation
TC=25°C
TC=100°C
RθJC Thermal Resistance-Junction to Case
RθJA a Thermal Resistance-Junction to Ambient
Note : Surface Mounted on 1in2 pad area, t 10sec.
Rating
Unit
N Channel P Channel
40 -40
V
±20 ±20
7.5 -6
A
30 -25
7.5 -6 A
150
-55 to 150
°C
2.5 W
1
5 °C/W
50
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a
Drain-Source On-State
Resistance
VGS=0V, IDS=250µA
VGS=0V, IDS=-250µA
VDS=32V, VGS=0V
TJ=85°C
VDS=-32V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VDS=VGS, IDS=-250µA
VGS=±20V, VDS=0V
VGS=±20V, VDS=0V
VGS=10V, IDS=7.5A
VGS=-10V, IDS=-6A
VGS=5V, IDS=5A
VGS=-5V, IDS=-3.5A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
APM4052DU4
Unit
Min. Typ. Max.
40 -
-40 -
-
V
-
- -1
- - 30
µA
- - -1
- - -30
1.3 2 2.5
V
-1.3 -2 -2.5
- - ±100
- - ±100 nA
- 30 38
- 40 50
m
- 46 62
- 52 73
Copyright © ANPEC Electronics Corp.
Rev. A.3 - Jan., 2009
2
www.anpec.com.tw





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