2SA950

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 2SA950 Audio Power Amplifier Applications Unit: mm · High hFE: hFE = 100~320 · 1 W output applications · Complementary to 2SC2120 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -35 -30 -5 -800 -160 600 150 -55~150 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO IEBO VCB = -35 V, IE = 0 VEB = -5 V, IC = 0 V (BR) CEO IC = -10 mA, IB = 0 hFE (1) VCE = -1 V, IC = -100 mA (Note) hFE (2) VCE (sat) VCE = -1 V, IC = -700 mA IC = -500 mA, IB = -20 mA VBE VCE = -1 V, IC = -10 mA fT VCE = -5 V, IC = -10 mA Cob VCB = -10 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 100~200, Y: 160~320 Min Typ. Max Unit ¾ ¾ -0.1 mA ¾ ¾ -0.1 mA -30 ¾ ¾ V 100 ¾ 320 35 ¾ ¾ ¾ ¾ -0.7 V -0.5 ¾ -0.8 V ¾ 120 ¾ MHz ¾ 19 ¾ pF 1 2003-03-24 2SA950 2 2003-03-24 2SA950 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the...