DatasheetsPDF.com

MTB16P04J3 Dataheets PDF



Part Number MTB16P04J3
Manufacturers Cystech Electonics
Logo Cystech Electonics
Description P-Channel Enhancement Mode Power MOSFET
Datasheet MTB16P04J3 DatasheetMTB16P04J3 Datasheet (PDF)

CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C706J3 Issued Date : 2009.04.23 Revised Date : Page No. : 1/7 MTB16P04J3 Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) -40V -25A 16mΩ Equivalent Circuit MTB16P04J3 Outline TO-252 G:Gate D:Drain S:Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Contin.

  MTB16P04J3   MTB16P04J3



Document
CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C706J3 Issued Date : 2009.04.23 Revised Date : Page No. : 1/7 MTB16P04J3 Features • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) -40V -25A 16mΩ Equivalent Circuit MTB16P04J3 Outline TO-252 G:Gate D:Drain S:Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=-25A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% MTB16P04J3 www.DataSheet4U.net VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg -40 ±20 -25 -18 -100 -25 31.25 15 50 17 -55~+175 V A mJ W °C CYStek Product Specification CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Spec. No. : C706J3 Issued Date : 2009.04.23 Revised Date : Page No. : 2/7 Value 2.5 75 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS ID(ON) RDS(ON) *1 *1 Min. -40 -1.5 -25 - Typ. -1.8 24 14 22 32 8.4 9.8 15 40 60 50 4285 1642 1532 3.5 40 30 Max. -3.2 ±100 -1 -25 16 27 -25 -100 -1.3 - Unit V V S nA μA μA A mΩ mΩ Test Conditions VGS=0, ID=-250μA VDS =VGS, ID=-250μA VDS =-5V, ID=-25A VGS=±20, VDS=0 VDS =-32V, VGS =0 VDS =-30V, VGS =0, Tj=125°C VDS =-5V, VGS =-4.5V VGS =-10V, ID=-25A VGS =-7V, ID=-20A *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr nC ID=-25A, VDS=-20V, VGS=-10V VDS=-20V, ID=-1A, VGS=-10V, RG=6Ω ns pF Ω A V ns nC VGS=0V, VDS=-20V, f=1MHz VGS=15mV, VDS=0, f=1MHz IF=IS, VGS=0V IF=-25A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device MTB16P04J3 MTB16P04J3 Package TO-252 (RoHS compliant & Halogen-free package) Shipping 2500 pcs / Tape & Reel Marking B16P04 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Spec. No. : C706J3 Issued Date : 2009.04.23 Revised Date : Page No. : 3/7 MTB16P04J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Spec. No. : C706J3 Issued Date : 2009.04.23 Revised Date : Page No. : 4/7 MTB16P04J3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C706J3 Issued Date : 2009.04.23 Revised Date : Page No. : 5/7 Carrier Tape Dimension MTB16P04J3 CYStek Product Specification CYStech Elect.


KV-SW212P50 MTB16P04J3 B12NM50


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)