Document
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
Spec. No. : C706J3 Issued Date : 2009.04.23 Revised Date : Page No. : 1/7
MTB16P04J3
Features
• Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package
BVDSS ID RDSON(MAX)
-40V -25A 16mΩ
Equivalent Circuit
MTB16P04J3
Outline
TO-252
G:Gate D:Drain S:Source
G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter Symbol Limits Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=-25A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
MTB16P04J3 www.DataSheet4U.net
VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg
-40 ±20 -25 -18 -100 -25 31.25 15 50 17 -55~+175
V
A
mJ W °C
CYStek Product Specification
CYStech Electronics Corp.
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a
Spec. No. : C706J3 Issued Date : 2009.04.23 Revised Date : Page No. : 2/7
Value 2.5 75
Unit °C/W °C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol Static BVDSS VGS(th) GFS IGSS IDSS ID(ON) RDS(ON)
*1 *1
Min. -40 -1.5 -25 -
Typ. -1.8 24 14 22 32 8.4 9.8 15 40 60 50 4285 1642 1532 3.5 40 30
Max. -3.2 ±100 -1 -25 16 27 -25 -100 -1.3 -
Unit V V S nA μA μA A mΩ mΩ
Test Conditions VGS=0, ID=-250μA VDS =VGS, ID=-250μA VDS =-5V, ID=-25A VGS=±20, VDS=0 VDS =-32V, VGS =0 VDS =-30V, VGS =0, Tj=125°C VDS =-5V, VGS =-4.5V VGS =-10V, ID=-25A VGS =-7V, ID=-20A
*1
Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr
nC
ID=-25A, VDS=-20V, VGS=-10V VDS=-20V, ID=-1A, VGS=-10V, RG=6Ω
ns
pF Ω A V ns nC
VGS=0V, VDS=-20V, f=1MHz VGS=15mV, VDS=0, f=1MHz
IF=IS, VGS=0V IF=-25A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature.
Ordering Information
Device MTB16P04J3
MTB16P04J3
Package TO-252 (RoHS compliant & Halogen-free package)
Shipping 2500 pcs / Tape & Reel
Marking B16P04
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C706J3 Issued Date : 2009.04.23 Revised Date : Page No. : 3/7
MTB16P04J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C706J3 Issued Date : 2009.04.23 Revised Date : Page No. : 4/7
MTB16P04J3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C706J3 Issued Date : 2009.04.23 Revised Date : Page No. : 5/7
Carrier Tape Dimension
MTB16P04J3
CYStek Product Specification
CYStech Elect.