NEC
PNP SILICON TRANSISTOR
2SA992
OESCR IPTION FEATURES
The 2SA992 is best for use as the middle range amplifier in H...
NEC
PNP SILICON
TRANSISTOR
2SA992
OESCR IPTION FEATURES
The 2SA992 is best for use as the middle range amplifier in Hi-Fi stereo control amplifiers; power amplifiers, and etc.
High Voltage.
VCEO : -120 V
Low Output Capacitance.
Cob : 2.0 pF TYP. (VCB =-30 V)
High hFE.
hFE : 500 TYP. (VCE =-6.0 V, Ic =-1.0 mA)
Super Low Noise. NV : 25 mV TYP. (See test circuit.)
Complementary to 2SC1845.
PACKAGE DIMENSiONs in millimeters (inchesl
5.2 MAX. (0.204 MAX.)
II
ABSOLUTE MAXIMUM RATINGS
Maximum Temp.eratures
Storage Temperature
.. -55to+125°C
Junction Temperature ........
+ 125°C Maximum
Maximum Power Dissipation (Ta = 25°C)
Total Power Dissipation .......
500 mW
Maximum Voltages and Currents (Ta = 25 oe)
VCBO Collector to Base Voltage .
-120 V
VCEO Collector to Emitter Voltage
-120 V
VEBO Emitter to Base Voltage . . . . . . . . . . . . . -5.0 V
Ic Collector Current ................ . -50mA
IB Base Current
-10mA
ELECTRICAL CHARACTERISTICS (Ta =25 °C)
1. EMITTER
EIAJ: SC-43B
2. COLLECTOR JEDEC: TO-92
3. BASE
IEC: PA33
SYMBOL.
hFE1 hFE2 fT Cob NV
CHARACTERISTIC OC Current Gain OC Current Gain Gain Bandwidt'h Product Output Capacitance Noise Voltage
ICBO IEBO VBE VCE(sat)
Collector Cutoff Current Emitter Cutoff Current Base to Emitter Voltage
Collector Saturation Voltage
MIN. 150 200 50
-0.55
TYP. 500 500 100 2.0 25
-0.61 -0.09
MAX.
800
3.0 40
-50 -50 -0.65 -0.30
UNIT
MHz pF mV
nA nA
v
V
TEST CONOITIONS
VCE =-6.0 V, IC =-0.1 mA VCE =...