MB81EDS256445

FUJITSU MICROELECTRONICS DATA SHEET DS05-11456-1E MEMORY Consumer FCRAMTM CMOS 256M Bit (4 bank x 1M word x 64 bit) Consumer Applications Specific Memory for SiP MB81EDS256445 ■ DESCRIPTION The Fujitsu MB81EDS256445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double Data Rate (LPDDR) SDRAM Interface containing 268,435,456 storages accessible in a 64-bit format. MB81EDS256445 is suited for consumer application requiring high data band width with low power consumption. * : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan ■ FEATURES 1 M word × 64 bit × 4 banks organization DDR Burst Read/Write Access Capability -tCK = 4.6 ns Min / 216 MHz Max (Tj ≤ + 105 °C) -tCK = 5 ns Min / 200 MHz Max (Tj ≤ + 125 °C) Low Voltage Power Supply: VDD = VDDQ + 1.7 V to + 1.95 V Junction Temperature: TJ = − 10 °C to + 125 °C 1.8 V-CMOS compatible inputs Burst Length: 2, 4, 8, 16 CAS latency: 2, 3, 4 Clock Stop capability during idle periods Auto Precharge option for each burst access Configurable Driver Strength and Pre Driver Strength Auto Refresh and Self Refresh Modes Deep Power Down Mode Low Power Consumption -IDD4R =300 mA Max @ 3.46 GByte/s -IDD4W =330 mA Max @ 3.46 GByte/s 4 K refresh cycles / 4 ms (Tj ≤ +125 °C) Copyright©2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2009.8 www.DataSheet4U.net MB81EDS256445 ■ PIN DESCRIPTIONS Symbol CK, CK CKE CS RAS CAS WE BA[1:0] A[11:0] AP(A10) DM[7:0] *1 DQ[63:0] *1, *2 ...