2SB0710A

Transistors 2SB0710, 2SB0710A Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD0602 and 2SD0602A I Features Large collector current IC Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10° 1.1+0.2 –0.1 Parameter Collector to base voltage Collector to emitter voltage 2SB0710 2SB0710A 2SB0710 2SB0710A Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating − 30 − 60 − 25 − 50 −5 −1 −500 200 150 −55 to +150 Unit V V 1: Base 2: Emitter 3: Collector 0 to 0.1 1.1+0.3 –0.1 I Absolute Maximum Ratings Ta = 25°C (0.65) JEDEC: TO-236 EIAJ: SC-59 Mini Type Package Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V A mA mW °C °C Marking Symbol 2SB0710 : C 2SB0710A : D I Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Symbol ICBO 2SB0710 2SB0710A 2SB0710 2SB0710A VEBO hFE1 hFE2 *2 Conditions VCB = −20 V, IE = 0 IC = −10 µA, IE = 0 IC = −10 mA, IB = 0 IE = −10 µA, IC = 0 VCE = −10 V, IC = −150 mA VCE = −10 V, IC = −500 mA IC = −300 mA, IB = −30 mA IC = −300 mA, IB = −30 mA VCB = −10 V, IE = 50 mA, f = 200 MHz VCB = −10 V...