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Power Transistor. IPA90R1K2C3 Datasheet

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Power Transistor. IPA90R1K2C3 Datasheet






IPA90R1K2C3 Transistor. Datasheet pdf. Equivalent




IPA90R1K2C3 Transistor. Datasheet pdf. Equivalent





Part

IPA90R1K2C3

Description

CoolMOS Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPA90R1K2C3 Datasheet


Infineon Technologies IPA90R1K2C3

IPA90R1K2C3; IPA90R1K2C3 CoolMOS™ Power Transistor Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • Hig h peak current capability • Qualified according to JEDEC1) for target applic ations • Pb-free lead plating; RoHS c ompliant • Ultra low gate charge Pro duct Summary V DS @ T J=25°C R DS(on), max @T J=25°C Q g,typ 900 1.2 28 V Ω nC PG-TO220 FP CoolMOS™ 900V is d.


Infineon Technologies IPA90R1K2C3

esigned for: • Quasi Resonant Flyback / Forward topologies • PC Silverbox a nd consumer applications • Industrial SMPS Type IPA90R1K2C3 Package PG TO2 20 FP Marking 9R1K2C Maximum ratings, at T J=25 °C, unless otherwise specif ied Parameter Continuous drain current 2) Symbol Conditions ID T C=25 °C T C =100 °C Value 5.1 3.2 10 68 0.31 0.92 Unit A Pulsed drain curr.


Infineon Technologies IPA90R1K2C3

ent 3) Avalanche energy, single pulse Av alanche energy, repetitive t AR 3),4) A valanche current, repetitive t AR 3),4) MOSFET dv /dt ruggedness Gate source v oltage I D,pulse E AS E AR I AR dv /dt V GS T C=25 °C I D=0.92 A, V DD=50 V I D=0.92 A, V DD=50 V mJ A V/ns V V DS=0...400 V static AC (f>1 Hz) 50 ± 20 ±30 31 -55 ... 150 Power dissipati on Operating and stor.



Part

IPA90R1K2C3

Description

CoolMOS Power Transistor

Manufacture

Infineon Technologies

Datasheet
Download IPA90R1K2C3 Datasheet




 IPA90R1K2C3
CoolMOSPower Transistor
Features
• Lowest figure-of-merit RON x Qg
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
Product Summary
V DS @ T J=25°C
R DS(on),max @T J=25°C
Q g,typ
IPA90R1K2C3
900 V
1.2
28 nC
PG-TO220 FP
Type
IPA90R1K2C3
Package
PG TO220 FP
Marking
9R1K2C
Maximum ratings, at T J=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current 2)
I D T C=25 °C
Pulsed drain current 3)
I D,pulse
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
Avalanche energy, repetitive t AR 3),4)
Avalanche current, repetitive t AR 3),4)
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
I D=0.92 A, V DD=50 V
I D=0.92 A, V DD=50 V
V DS=0...400 V
static
AC (f>1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T J, T stg
Mounting torque
M2.5 screws
www.DRateavS.he1e.t04U.net
page 1
Value
5.1
3.2
10
68
0.31
0.92
50
±20
±30
31
-55 ... 150
50
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2008-07-29





 IPA90R1K2C3
Maximum ratings, at T J =25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current 2)
Diode pulse current 3)
Reverse diode dv/dt 5)
IS
I S,pulse
dv/dt
T C=25 °C
IPA90R1K2C3
Value
2.8
11
4
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
min.
Values
typ.
Unit
max.
- - 4.1 K/W
- - 62
- - 260 °C
Electrical characteristics, at T J=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=V GS, I D=0.31 mA
I DSS
V DS=900 V, V GS=0 V,
T j=25 °C
900
2.5
-
V DS=900 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=2.8 A,
T j=25 °C
-
-
-
V GS=10 V, I D=2.8 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
3
-
10
-
0.94
2.5
1.3
-V
3.5
1 µA
-
100 nA
1.2
-
-
Rev. 1.0
page 2
2008-07-29





 IPA90R1K2C3
Parameter
Dynamic characteristics
Symbol Conditions
IPA90R1K2C3
min.
Values
typ.
Unit
max.
Input capacitance
Output capacitance
C iss V GS=0 V, V DS=100 V, - 710 - pF
C oss
f =1 MHz
- 35 -
Effective output capacitance, energy
related 6)
C o(er)
Effective output capacitance, time
related 7)
C o(tr)
V GS=0 V, V DS=0 V
to 500 V
- 23 -
- 86 -
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t d(on)
- 70 - ns
t r V DD=400 V,
- 20 -
V GS=10 V, I D=2.8 A,
t d(off)
R G=81.3
- 400 -
t f - 40 -
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=400 V, I D=2.8 A,
V GS=0 to 10 V
-
-
-
-
3.2 - nC
12 -
28 tbd
4.6 - V
Reverse Diode
Diode forward voltage
V SD
V GS=0 V, I F=2.8 A,
T j=25 °C
- 0.8 1.2 V
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 310 - ns
- 3.7 - µC
- 19 - A
1) J-STD20 and JESD22
2) Limited only by maximum temperature
3) Pulse width t p limited by T J,max
4) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
5) ISDID, di/dt200A/µs, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch
6) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 50% VDSS.
7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 50% V DSS.
Rev. 1.0
page 3
2008-07-29



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